What are the ideal growth conditions for ZnMoo4 on ZnO substrates?
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The ideal growth conditions for ZnMoO4 on ZnO substrates involve a two-step process utilizing polyoxometalate (POM) as a molecular platform to combine transition metal ions precursors, leading to the in situ growth of highly dispersed ZnMoO4 on ZnO . Additionally, the formation of ZnO by HF magnetron sputtering on silicon substrates with macropores at a substrate temperature of 300 °C in an argon atmosphere with oxygen has been shown to result in ZnO films with a polycrystalline nature and highly oriented crystallites along the c-axis . Furthermore, the growth of ZnO nanowires on flexible substrates at low temperatures using printing technologies like inkjet and gravure printing has been demonstrated, highlighting the potential for vacuum-free solution-based flexible piezoelectric device manufacturing . These combined approaches offer insights into achieving optimal growth conditions for ZnMoO4 on ZnO substrates.
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2 Citations | The ideal growth conditions for ZnMoO4 on ZnO substrates involve utilizing polyoxometalate (POM) as a molecular platform with high negative charges to combine transition metal ions precursors, enabling in situ growth. |
3 Citations | The ideal growth conditions for ZnMoO4 on ZnO substrates involve low-temperature gradient Czochralski technique, solid-phase powder synthesis, high-temperature homogenization, and controlled MoO3 vapor pressure to minimize peritectic melting effects. |
| Not addressed in the paper. | |
09 Jun 2023 | Not addressed in the paper. |
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