What is the effective mass of holes in silicon 100 dangling bonds?
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The effective mass of holes in silicon 100 dangling bonds depends on various factors. The strain in Si/(111)Si1−x Ge x affects the directional, averaged, and density-of-states effective masses of holes . In hydrogenated amorphous silicon, the variation of hole mobility-lifetime values with Fermi energy can be explained by the occupation statistics of dangling bond states . The mobility, lifetime, and capture cross sections for trapping holes at dangling bond defects in a‐Si:H are also measured . The electronic properties of atomic-scale dangling bonds on Si(100)-2 × 1:H surfaces have been studied using a scanning tunneling microscope . However, the specific effective mass of holes in silicon 100 dangling bonds is not explicitly mentioned in the provided abstracts.
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17 Citations | The provided paper does not mention the effective mass of holes in silicon 100 dangling bonds. |
6 Citations | The provided paper does not mention the effective mass of holes in silicon 100 dangling bonds. |
139 Citations | The provided paper does not mention the effective mass of holes in silicon 100 dangling bonds. |
| The provided paper does not mention the effective mass of holes in silicon 100 dangling bonds. | |
1 Citations | The provided paper is about the effective mass of holes in strained Si/(111)Si1−x Ge x. It does not mention anything about silicon 100 dangling bonds. |
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