What is the law for carrier mobility in hgcdte?
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The carrier mobility in HgCdTe is an important parameter for the performance of optoelectronic devices. The minority carrier mobility in p-type HgCdTe can be obtained by measuring the modulated Hall voltage in a magnetic field . In n-type HgCdTe quantum wells, electron mobility can be enhanced by increasing the electron concentration in the well through delta-doping or top-gate techniques . Magnetotransport measurements in HgCdTe have been used to extract the mobilities and densities of various carriers participating in conduction . A semi-empirical electron mobility model has been proposed for HgCdTe photodetectors, which takes into account the field-dependent mobility and the dominant scattering mechanisms . The temperature dependence of electron mobility in p-HgCdTe films has been investigated using the mobility-spectrum method and magnetophotoconductivity method .
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| The paper proposes a new semi-empirical electron mobility model for HgCdTe. It calculates low field mobility using the relaxation time approximation and modifies the ionized impurity model to consider degeneracy effects. A new formula is proposed for field-dependent mobility. | |
24 Aug 2009 2 Citations | The paper does not explicitly mention the law for carrier mobility in HgCdTe. |
01 Sep 2015 | The paper does not explicitly mention the law for carrier mobility in HgCdTe. |
5 Citations | The paper discusses the calculation of carrier mobility in HgCdTe using the semiclassical Boltzmann transport equation, incorporating various scattering mechanisms. However, it does not explicitly mention a specific law for carrier mobility in HgCdTe. |
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