Showing papers on "Atomic layer deposition published in 1977"
TL;DR: In this article, the ionized-cluster beam deposition and epitaxy techniques are used for semiconductor device fabrication, and the deposited film shows good adhesion, good conduction even in a very thin film and a good crystalline state.
45 citations
Patent•
06 Oct 1977TL;DR: In this article, it has been shown that by preheating at a lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide.
Abstract: In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40° to 60° C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.
29 citations
16 citations