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Showing papers on "Photoelectrolysis published in 1984"


Journal ArticleDOI
TL;DR: A characterization of optical and electronic properties for p-type and n-type (Si-doped) iron oxides used in the photoelectrolysis of water is presented in this article.
Abstract: A characterization of optical and electronic properties is presented for p-type (Mg-doped) and n-type (Si-doped) iron oxides used in the photoelectrolysis of water. Photocurrent vs. wavelength spectra for these electrodes indicate that ..cap alpha..-Fe/sub 2/O/sub 3/ is the active optical component for both p-type and n-type materials. Band-edge locations for p-type and n-type iron oxides in sodium hydroxide aqueous solution are determined from differential capacitance measurements. The thermodynamic feasibility of the catalytic photodissociation of water without external potential is demonstrated for a short-circuited p/n diode assembly on an energy level diagram of the electrode/electrolyte interfaces. The open-circuit voltage (V/sub oc/) and short-circuit current (I/sub sc/) generated by the p/n assembly as a function of the intensity of laser irradiation indicate that these doped iron oxides are low mobility, high carrier density semiconductors. Photo-oxidation of water at the n-type anode is verified through oxygen detection. Gas evolution is monitored from an operating diode assembly using mass spectrometry and isotopically labeled water (H/sub 2//sup 18/O). Photocurrent from these p/n assemblies show excellent long-term stability in aqueous solution and Auger analysis of the semiconductor surfaces indicates no evidence of electrode dissolution.

82 citations


Journal ArticleDOI
TL;DR: In this paper, the rotating ring-disk electrode (RRDE) technique has been used to investigate the photoproduction of H/sub 2/O during water photoelectrolysis on n-TiO/Sub 2/.
Abstract: The rotating ring-disk electrode (RRDE) technique has been used to investigate the photoproduction of H/sub 2/O during water photoelectrolysis on n-TiO/sub 2/. In spite of the fact that hydrogen peroxide is a real intermediate product of water photoelectrolysis, it cannot be detected at the ring electrode under different working conditions of illumination intensity and disk potential. Part of the photogenerated H/sub 2/O/sub 2/ is believed to be photooxidized before diffusing away from the electrode. Probably a very small amount of H/sub 2/O/sub 2/, which is under the detection limit of the RRDE technique, is able to dissolve into the electrolyte. Mechanisms describing O/sub 2/ evolution via the photogeneration of H/sub 2/O/sub 2/, which are consistent with the observed RRDE results, are postulated.

54 citations


Journal Article
TL;DR: In this article, the methode de l'electrode a disque et anneau tournant pour etudier la photoproduction de H 2 O 2 au cours de la photoelectrolyse de l'seau sur TiO 2 -n
Abstract: Utilisation de la methode de l'electrode a disque et anneau tournant pour etudier la photoproduction de H 2 O 2 au cours de la photoelectrolyse de l'eau sur TiO 2 -n

47 citations


Journal ArticleDOI
TL;DR: In this article, a Pt-coated n/sup +/p-Si electrode was shown to generate a photocurrent corresponding to iodine reduction in a hydrogen iodide/iodine solution at potentials much more positive than those at platinum and p-Si electrodes.
Abstract: A p-type silicon electrode, highly doped with phosphorus from the surface (hereafter abbreviated as an n/sup +//p-Si electrode), generated a photocurrent corresponding to iodine (or triiodide) reduction in a hydrogen iodide/iodine solution at potentials much more positive than those at platinum and p-Si electrodes. The photocurrent-potential curve did not change when the electrode was illuminated for 60 h at a sufficiently cathodic potential, but changed due to the formation of a thin silicon oxide layer at the surface when illuminated near the onset potential of the photocurrent. The kinetics of the photoevolution of hydrogen on the n/sup +//p-Si electrode in acid solutions were improved by depositing a 0.5-3 nm thick platinum layer on the surface. The hydrogen-evolution photocurrent at the Pt-coated n/sup +//p-Si electrode gradually decayed under prolonged illumination, but was restored to the initial value by keeping the electrode in an oxidative condition. This suggests that the decay is due to the formation of a reduced surface species. Photoelectrochemical cells constructed with a Pt-deposited n/sup +//p-Si electrode and a Pt counterelectrode separated by a commercial cation-exchange membrane electrolyzed hydrogen iodide into hydrogen and triiodide ions under no externally applied voltage with an encouragingly high solar-to-chemical energy conversion efficiency (phi/submore » chem//sup s/) of 7.8% under simulated solar AM 1 radiation. 30 references, 8 figures.« less

43 citations


Journal ArticleDOI
TL;DR: In this article, a model based on the existence of surface states in the bandgap region, generated by illumination, is supported by the experimental results, and the nature of the surface states involved in these photocurrent transients and their implication in the quantum efficiency of the system are discussed.

43 citations


Journal ArticleDOI
TL;DR: In this paper, a correlation between variations in valence band character and the kinetics of the dissolution reaction was suggested, and the authors suggested that the variation in band character is correlated with anodic corrosion in Ru dichalcogenides.

37 citations


Patent
16 Feb 1984
TL;DR: An amorphous silicon semiconductor alloy having multiple layers is used to form a photoelectrode (either a photoanode or a photocathode) for use in a photo-electrochemical cell for the photo-lysis of water to produce hydrogen or the conversion of solar energy into electrical energy.
Abstract: An amorphous silicon semiconductor alloy having multiple layers is used to form a photoelectrode (either a photoanode or a photocathode) for use in a photoelectrochemical cell for the photoelectrolysis of water to produce hydrogen or the conversion of solar energy into electrical energy Each layer of the semiconductor alloy has a different dopant concentration ranging from no dopant to a heavy dopant concentration The photoelectrochemical cell can utilize a photocathode and a conventional metal anode, a photoanode or both a photocathode and a photoanode according to the present invention The semiconductor alloy of the photoelectrode is a-Si:F:H or a-Si:H x deposited on a reflective layer of aluminum or molybdenum which is deposited on a substrate of glass or stainless steel A tunnelable oxide layer can be deposited or intrinsically formed to cover and protect the top surface of the semiconductor alloy body The photoanode is of an n-type configuration while the photocathodes can be either a p-type or a P-I-N type configuration

29 citations


Journal ArticleDOI
TL;DR: In this article, two photovoltaic couples, consisting of n on p and p on n gallium arsenide, respectively, have been converted into a water splitting device, where light is allowed to fall on one part of one couple, which is in contact with air, and on the n side platinum is plated, which contacts the solution.

25 citations


Journal ArticleDOI
TL;DR: Etude de l'influence des defauts de reseau produits par polissage mecanique de la surface sur les proprietes photo-electrochimiques des anodes polycristallines de SrTiO 3 as mentioned in this paper.
Abstract: Etude de l'influence des defauts de reseau produits par polissage mecanique de la surface sur les proprietes photo-electrochimiques des anodes polycristallines de SrTiO 3

23 citations


Journal ArticleDOI
TL;DR: In this paper, the main difficulties in practical realization of the conversion process and some possible methods of surmounting them are formulated, and a review systematizes information on photoelectrochemical cells, both for production of hydrogen by water photo-electrolysis and for electric power generation in liquid-junction solar cells.

21 citations


Journal ArticleDOI
TL;DR: The electronic and electrochemical properties of vapour-grown single-crystal PdO are reported in this article, where a p-type semiconductor with a bandgap of about 0.8 eV is shown to correspond to a strongly forbidden d-d transition.

Patent
05 Mar 1984
TL;DR: In this paper, a passive hydrogen oxygen generator is proposed, in which the long wavelength infrared portion of the sun's spectrum heats water to provide circulation of the water within the generator.
Abstract: A passive hydrogen oxygen generator in which the long wavelength infrared portion of the sun's spectrum heats water to provide circulation of the water within the generator. The shorter wavelength portion of the spectrum to which water is transparent is used in splitting water into hydrogen and oxygen by photoelectrolysis.

Patent
30 Nov 1984
TL;DR: In this article, the photoelectrolysis of water by solar radiation to produce hydrogen and oxygen is achieved using semiconductor electrodes, and the cell comprises a p-silicon wafer treated with catalyst as photocathode and metal doped n -silicon Wafer as photoanode.
Abstract: The photoelectrolysis of water by solar radiation to produce hydrogen and oxygen is achieved using semiconductor electrodes The cell comprises a p-silicon wafer treated with catalyst as photocathode and metal doped n-silicon wafer as photoanode The cell is operated at a small bias potential

Journal ArticleDOI
TL;DR: In this paper, the effect of the photocatalytic properties of photosystems I and II deposited on platinized platinum electrodes on the evolution of hydrogen and oxygen in water is presented.

Journal ArticleDOI
TL;DR: In this article, a Pt-coated n/sup +/p-Si electrode was shown to generate a photocurrent corresponding to iodine reduction in a hydrogen iodide/iodine solution at potentials much more positive than those at platinum and p-Si electrodes.
Abstract: A p-type silicon electrode, highly doped with phosphorus from the surface (hereafter abbreviated as an n/sup +//p-Si electrode), generated a photocurrent corresponding to iodine (or triiodide) reduction in a hydrogen iodide/iodine solution at potentials much more positive than those at platinum and p-Si electrodes. The photocurrent-potential curve did not change when the electrode was illuminated for 60 h at a sufficiently cathodic potential, but changed due to the formation of a thin silicon oxide layer at the surface when illuminated near the onset potential of the photocurrent. The kinetics of the photoevolution of hydrogen on the n/sup +//p-Si electrode in acid solutions were improved by depositing a 0.5-3 nm thick platinum layer on the surface. The hydrogen-evolution photocurrent at the Pt-coated n/sup +//p-Si electrode gradually decayed under prolonged illumination, but was restored to the initial value by keeping the electrode in an oxidative condition. This suggests that the decay is due to the formation of a reduced surface species. Photoelectrochemical cells constructed with a Pt-deposited n/sup +//p-Si electrode and a Pt counterelectrode separated by a commercial cation-exchange membrane electrolyzed hydrogen iodide into hydrogen and triiodide ions under no externally applied voltage with an encouragingly high solar-to-chemical energy conversion efficiency (phi/submore » chem//sup s/) of 7.8% under simulated solar AM 1 radiation. 30 references, 8 figures.« less

Patent
16 Feb 1984
TL;DR: An amorphous silicon semiconductor alloy (32 and 34) having multiple layers (38 and 58) (42 and 60) is used to form a photoelectrode (either a photoanode (14) or a photocathode (16) for use in a photo-electrochemical cell (10) for the photoelectronlysis of water to produce hydrogen or the conversion of solar energy into electrical energy.
Abstract: An amorphous silicon semiconductor alloy (32 and 34) having multiple layers (38 and 58) (42 and 60) is used to form a photoelectrode (either a photoanode (14) or a photocathode (16) for use in a photoelectrochemical cell (10) for the photoelectrolysis of water to produce hydrogen or the conversion of solar energy into electrical energy. Each layer of the semiconductor alloy has a different dopant concentration ranging from no dopant to a heavy dopant concentration. The semi-conductor alloy of the photoelectrode is a -Si:F:H or a-Si:Hx deposited on a reflective layer (28 and 30) of aluminum of molybdenum which is deposited on a substrate (24 and 28) of glass or stainless steel. A tunnelable oxide layer (62) can be deposited or intrinsically formed to cover and protect the top surface (60) of the semiconductor alloy body. The photoanode is of an n-type configuration while the photocathodes can be either a p-type or a P-I-N type configuration.

Book ChapterDOI
TL;DR: In this paper, the authors take advantage of the favorable property of sulfur as a metal ligand which permits efficient d-d interaction resulting in adequate d-D splitting and reasonably broad d-state energy bands.
Abstract: Crystallized metal compounds of sulfur are gaining increasing importance in various rapidly developing areas of solar energy conversion. One reason is that many metal sulfides form semiconductors with energy gaps well suited for the capture of solar energy. Several photovoltaic and photoelectrochemical solar cells with good energy conversion efficiencies have already been tested using CdS, Cu 2 S, CuInS 2 , MoS 2 and other sulfides. For the photoelectrolysis of water into hydrogen and oxygen semiconducting materials are being developed which permit light-induced hole reactions via valence energy bands derived from transition metal d-states. Sulfur compounds of transition metals (PtS 2 , RuS 2 , Ru 1-x Fe x S 2 ) constitute the first useful materials for oxygen evolution from water using low energy photons. In this case advantage is taken of the favourable property of sulfur as a metal ligand which permits efficient d-d interaction resulting in adequate d-d splitting and reasonably broad d-state energy bands. A third property of metal sulfides interesting for solar energy conversion is their ability to store chemical energy and to serve as an energy source for autotrophic bacteria (Thiobacilli). When metal sulfides are generated from their oxidation products (metal sulfates) by means of solar power using high pressure thermal and photoelectrochemical techniques, they can be used to grow bacterial biomass. Experimental and theoretical studies suggest that such an artificial solar biomass production could be far more energy-efficient than natural photosynthesis, besides of permitting the use of infertile and arid land on which compact and largely automatic installations would generate proteins, carbohydrates and lipids for energy and food with a remarkable economy of water consumption. Several aspects of sulfur chemistry with respect to mechanism of solar energy conversion are still unexplored and deserve detailed investigations.


Journal ArticleDOI
TL;DR: A characterization of optical and electronic properties for p-type and n-type (Si-doped) iron oxides used in the photoelectrolysis of water is presented in this paper.
Abstract: A characterization of optical and electronic properties is presented for p-type (Mg-doped) and n-type (Si-doped) iron oxides used in the photoelectrolysis of water. Photocurrent vs. wavelength spectra for these electrodes indicate that ..cap alpha..-Fe/sub 2/O/sub 3/ is the active optical component for both p-type and n-type materials. Band-edge locations for p-type and n-type iron oxides in sodium hydroxide aqueous solution are determined from differential capacitance measurements. The thermodynamic feasibility of the catalytic photodissociation of water without external potential is demonstrated for a short-circuited p/n diode assembly on an energy level diagram of the electrode/electrolyte interfaces. The open-circuit voltage (V/sub oc/) and short-circuit current (I/sub sc/) generated by the p/n assembly as a function of the intensity of laser irradiation indicate that these doped iron oxides are low mobility, high carrier density semiconductors. Photo-oxidation of water at the n-type anode is verified through oxygen detection. Gas evolution is monitored from an operating diode assembly using mass spectrometry and isotopically labeled water (H/sub 2//sup 18/O). Photocurrent from these p/n assemblies show excellent long-term stability in aqueous solution and Auger analysis of the semiconductor surfaces indicates no evidence of electrode dissolution.