Showing papers on "Photomask published in 1989"

0.3-micron Optical Lithography Using A Phase-Shifting Mask

Abstract: Improved resolution of an available i-line (365nm) stepper using a phase-shifting mask is discussed. The resolution investigated here is not only for periodic lines but also for isolated spaces and hole patterns. To obtain a narrow bright line for printing a fine isolated space on a wafer, two additional line apertures with widths smaller than the critical dimension of the stepper lens are placed on each side of the main aperture of the mask. The optical phase of the main aperture and those of additional apertures are opposite. The additional apertures play a role in reducing the bright feature size to less than the line spread function of the lens. Similarly, printing a fine hole is accomplished by using a main aperture surrounded by four additional apertures. The intensity distribution on the wafer is calculated by comparing the results obtained with a phase-shifting mask and those obtained with a conventional transmission mask. Patterns are also printed on the wafer using an i-line stepper with a nominal 0.55 μm resolution. A pattern of 0.3-μm lines and spaces, 0.3-μm isolated spaces and 0.4-μm hole patterns are resolved using the phase-shifting mask. This resolution is impossible with a conventional transmission mask. The effects of variations in the optical phase of the additional apertures are also investigated. The intensity calculations and experimental results suggest that it is possible to control the position of the best focal plane by changing the optical phases of the additional apertures.

Method of and apparatus for detecting defect on photomask

Abstract: A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.

Manufacture of thin-film transistor

Abstract: PURPOSE:To manufacture a TFT in a process of three photomasks, to improve a throughput and to reduce a manufacture cost by forming a semiconductor film self-matchingly to a pattern whose shape is the same as a gate electrode by rear exposure, by removing a transparent conductive film from a gate electrode by rear exposure, and by applying etching successively again to the transparent film and the semiconductor film using a photomask to form a pattern. CONSTITUTION:A gate wiring and a gate electrode consisting of a metal 1 is formed by a first photomask on a glass substrate. A gate insulating film 4 and a semiconductor film 3 are deposited and a resist 2 having almost the same shape as a gate electrode is formed by rear exposure. After a semiconductor film 3 is etched, a transparent conductive film 5 is deposited all over and a resist 2 which is a reverse pattern of a gate electrode is formed by rear exposure. After the transparent conductive film 5 is etched, the resist 2 is formed by a second photomasks. The transparent conductive film and the semiconductor film are etched successively using the resist 2 as a mask. A second metal is deposited and a drain wiring 9 is formed by a third photomask. Thereby, it is possible to reduce the number of photomasks used in a manufacture process of TFT and to reduce a manufacture cost.

Photomask blank and photomask

Abstract: PURPOSE: To reduce the surface reflectance of a photomask over a wide wavelength range and to form a perpendicular cross section by etching by continuously reducing the concn. of a specified additive element in a film from the surface of the film toward the substrate. CONSTITUTION: When a light shielding film and an antireflection film are successively formed on each transparent substrate to obtain a photomask blank, one or more kinds of elements selected among C, O, F and N are incorporated into the light shielding film of Cr so that the concn. of the elements is continuously reduced from the surface of the Cr film toward the substrate. Electric current is supplied to divided Cr targets 1-6 while reducing the value and electric discharge is caused in Ar contg. N and O. A Cr film contg. N and O in the desired distribution is formed by DC magnetron sputtering. COPYRIGHT: (C)1990,JPO&Japio

Manufacture of semiconductor device

Abstract: PURPOSE:To execute a highly accurate trimming operation without being influenced by a fluctuation in a threshold voltage or the like of a transistor due to formation of a final protective film by a method wherein a trimming operation of a metal wiring part of a semiconductor device is executed after the final protective film has been coated. CONSTITUTION:A final protective film 5 is coated on a metal wiring part 3. A patterning operation for electrode extraction port is executed on this protective film by using a resist. In order to form an electrode extraction port along a pattern of the resist, the final protective film 5 is etched. Then, a trimming measurement of a semiconductor device is executed; a photomask to be used for a trimming operation is selected. A resist 4 is coated on the final protective film; a patterning operation is executed by using the photomask selected by said trimming measurement. The final protective film is etched by using this pattern; the metal wiring part 3 is exposed; after that, a trimming operation is executed by etching the metal wiring part.

Production of active matrix substrate

Abstract: PURPOSE: To decrease the number of times of photolithography and to decrease film forming stages so as to reduce costs by executing a photolithography method while using gate electrodes in place of a photomask. CONSTITUTION: The gate electrodes 7 are formed by desired patterning on a light transparent substrate 6. A 1st insulator layer 9, a 1st semiconductor layer 10 and a passivation layer 11 are deposited thereon. A positive type photoresist 21 is then applied thereon and is irradiated with UV light 22 from the rear surface of the substrate with the gate electrodes 7 as a mask and is developed. The resist exclusive of the gate electrodes 7 is then removed. The layer 11 is etched with this resist 21 as a mask and a 2nd semiconductor layer 12 is deposited thereon and is patterned to a prescribed shape, thereafter, an ITO film is deposited thereon and drain electrodes 15, source electrodes 16, and picture element electrodes 17 are formed. The number of the photolithography is, therefore, decreased in this way. COPYRIGHT: (C)1990,JPO&Japio

Production of photomask

Abstract: PURPOSE: To eliminate the need for a resist and to simplify the process for production of a mask as well as to allow the production of the mask pattern having high accuracy by depositing a transition metal oxide as a mask material on a transparent substrate, exposing the oxide by an ion beam, etching the mask material, and further reducing the mask material CONSTITUTION: The amorphous transition metal oxide 11 is deposited atop the transparent glass substrate 1 The deposition is executed by vacuum vapor deposition The amorphous transition metal oxide 11 is then exposed to the prescribed mask pattern by irradiation and scanning with the ion beam 12 The entire part is then etched by an alkaline soln, such as NaOH, to remove the part irradiated with the ion beam 12 Finally, the amorphous transition metal oxide 11 is reduced in an H 2 atmosphere, etc, to form the amorphous transition metal This amorphous transition metal then becomes the photomask Since the resist is not used in this way, the time for formation is drastically shortened and the pattern accuracy is improved COPYRIGHT: (C)1991,JPO&Japio

Projection exposure system

Abstract: A projection exposure system is disclosed, which includes: a laser; a mask stage for supporting a photomask; a wafer stage for supporting a wafer; an illumination optical system effective to illuminate the photomask by use of a light from the laser; a projection optical system for projecting, upon the wafer, a circuit pattern formed on the photomask; an adjusting device for adjusting the wavelength to be emitted from the laser; a discharge tube disposed on a path for at least a portion of the light from the laser and being adapted to emit a predetermined line spectrum; a detecting device for detecting a change in a discharged electric current from the discharge tube; and a control device for controlling the adjusting device on the basis of an output signal from the detecting device.

Formation of thin film pattern

Abstract: PURPOSE: To improve the accuracy of comb-shaped parallel electrode patterns of an elastic surface wave element by forming photoresist patterns by using a photomask provided with a focus monitor pattern and a pattern width monitor pattern. CONSTITUTION: The photoresist patterns are formed by using the photomask 1 provided with the focus monitor pattern 3 consisting of plural pieces of waveform patterns and the pattern width monitor pattern 4 consisting of plural pieces of stepped strip patterns. Namely, the easy determination of optimum exposing conditions can be executed with extremely high accuracy by measuring the resist patterns consisting of the monitor patterns 3, 4. The resist patterns are formed under such optimum exposing conditions. The accuracy and quality of the comb-shaped electrodes are improved in this way. COPYRIGHT: (C)1991,JPO&Japio

Photomask for negative type resist

Abstract: PURPOSE: To improve the resolving power by providing a phase shifting layer which makes a 180° phase shift at a specific part of the light transmission part of the photomask. CONSTITUTION: The phase shifting layer 22 which makes the 180° phase shift is provided at the specific part of the light transmission part of the photomask 21, or a light shield pattern is formed at the light shield part A of the photomask 21 together with the phase shifting layer 22 which makes the 180° phase shift at the periphery of the light shield pattern 23. In the former case, light passed through the layer 22 is inverted in phase by shifting in phase to has amplitude interference with light passed through the light transmission part B and the light intensity below the layer 22 decreases. In the latter case, on the other hand, the amplitude of the light passed through the layer 22 arranged at the periphery of the light shield pattern 23 is inverted by shifting the phase to interfere with the amplitude of the light below the pattern 23, and the light intensity below the phase shifting layer decreases. Consequently, the resolving power and focus margin are improved. COPYRIGHT: (C)1991,JPO&Japio

Method and device for detecting fault of photomask

Abstract: PURPOSE: To detect the fault of a transparent film or a transparent foreign matter in a light transmission part by illuminating a photomask with coherent light having specified wavelength. CONSTITUTION: The photomask 5 mounted on a sample table 4 is illuminated with the light from a coherent light source 1 through a wavelength selection filter 2 and a condensing lens 3 and the sample table 4 is moved by a driving means 6 and a laser measuring device 7 measures the position. The transmitted light passes through a condensing lens 8 and forms the image of the photomask pattern on an image pickup element 9. The signal of the element 9 is controlled by a camera controller 10 and inputted in a comparison decision circuit 17 through an image memory 12, then compared with design data by the circuit 17. When a faulty area 24 exists in the transparent thin film 21 provided on the opening parts 20-1 and 20-2 on the photomask, which is shown by a figure A, a dark line part 25 along the contour of the faulty part is generated in the image transmitted to the circuit 17, which is shown by a figure B. It is because the light interferes at a boundary part since the wavelength of the coherent light is so selected that its phase may be inverted by the thin film 21, whereas the fault of the thin film is known. COPYRIGHT: (C)1990,JPO&Japio

Method for verifying mask pattern

Abstract: PURPOSE: To predict the deteriorated place of resist patterns by providing a means for forming the graphics to indicate the region where reflected light rays overlap on each other and a means for judging whether the overlapped regions of the reflected light rays exist or not on the pattern smaller than the layer to be formed on a substrate having a stepped slope. CONSTITUTION: The range to be influenced by the reflected light rays is determined from a graphic deformation by making use of the geometrical evaluatability of the reflected lights after the graphics 6, 7 indicating the stepped slopes on the substrate are formed by the graphics 1, 2 of the photomask of the layer which projects on the substrate by the wiring patterns of upper and lower layers. The region 25 to be strongly influenced by the reflected light rays in the above-mentioned region is formed. A point 25 to be deflective is discovered in the wiring pattern of the upper layer. The defective point of the wiring is easily verified by the photomask data of the layer forming the step and the photomask data of the wiring pattern formed in this step. COPYRIGHT: (C)1991,JPO&Japio

Photomask for semiconductor integrated circuit

Abstract: PURPOSE:To form a high-accuracy pattern as designed by providing a light translucent film on an integrated circuit part pattern area or the part of the reverse surface of the photomask which faces said integrated circuit part pattern area. CONSTITUTION:A reticle 10 has the integrated circuit part pattern area 12 and a scribing line part pattern area 13 on the surface of a glass substrate 11 and is provided with the light translucent film 14 uniformly at the part of the reverse surface which faces the integrated circuit part pattern area 12, and the part which is sectioned with A-A', B-B', C-C' and D-D' in a figure is exposed to a semiconductor substrate. Light projected on the reticle 10 when passing through the scribing line part pattern area 13 has intensity q1 without any variation. Light which passing through the integrated circuit pattern area 12, on the other hand, is decreased in intensity by the light translucent film 14 to q0. Here, the intensity q0 can be controlled by the material and film thickness of the light translucent film 14 formed on the reverse surface of the reticle 10 and the pattern is formed as designed.

Manufacture of photomask

Abstract: PURPOSE:To prevent pinholes of a resist film from occurring in manufacturing process of a photomask using a resist mask, by charging light-shielding patterns to negative charges in the development of a resist film or in etching process. CONSTITUTION:Since a light-shielding pattern 1b is charged to -20--30 volts in the case of ordinary chemical process. It is structured to prevent the chemical itself from charging by making the electrical potential of the light-shielding pattern 1b to -20 volts using a power supply 8 and a charging metal plate 7 to ground a spray nozzle 4. Since the light-shielding pattern 1b is charged to a potential of -20 volts by using the charging metal plate 7 connected to the negative polarity of an electrode 8 in this way, discharges will not occur even when the potential on the surface of a resist film 2 becomes 20-30 volts by chemical processing. Hence, occurrence of pinholes on the resist film 2 can be prevented.

Manufacture of semiconductor device

Abstract: PURPOSE:To contrive accomplishment of common use of a photomask for forming the uppermost-layer wiring layer pattern and to decrease the number of photomasks to be manufactured by a method wherein the uppermost-layer wiring layer pattern is normalized in the manufacturing method of a semiconductor device of a multilayer interconnection structure. CONSTITUTION:In the case of manufacture of a semiconductor device having a first-layer wiring layer 3A, a second-layer wiring layer 5A and a third-layer wiring layer 7, the pattern of the uppermost-layer wiring layer 7A is normalized. According to such a way, as a common photomask can be used in the case of formation of the uppermost-layer wiring layer pattern, the number of photomasks to be manufactured can be decreased by one sheet.

Fitting method for photomask pellicle

Abstract: PURPOSE:To prevent the generation of a defect of a photomask pattern by press-contacting a photomask pellicle against a photomask substrate in a state that a part to be attached is heated. CONSTITUTION:A photomask substrate 2 on which a photomask pattern 5 has been formed is set vertically to a photomask substrate positioning and fixing jig 7 provided with a built-in heater 8. Subsequently, by the heater 8, the photomask substrate 2 is heated to, for instance, about 40 deg., and in its heating state, a pellicle frame 4 to which for instance, an adhesive agent 6 of a rubber compound is applied is held by a pellicle holder, pressed against the photomask substrate 2, and welded by pressure by holding a prescribed time. In such a way, since the photomask substrate 2 containing the installation part is heated by the heater 8, the adhesive agent 6 is softened and comes to apt to flow uniformly, and without necessitating large pressure, the adhesive agent 6 spreads uniformly on the whole surface of the abutting surface, and press-contacted surely. Also, the generation of a defect of the photomask pattern can be prevented.

Single Photomask, Multilevel Kinoforms: Manufacture And Evaluation

Abstract: Kinoforms manufactured in photoresist with photolithographic techniques using a single, ten-level, grey-scale photomask, exposed in a specially designed laser exposure system, are described. Kinoforms designed for uniform as well as for partial Gaussian beam illumination are investigated. Measured diffraction efficiencies exceeded 50 percent.

Photomask for semiconductor integrated circuit

Abstract: PURPOSE:To facilitate the formation of different kinds of circuit patterns by arranging plural different kinds of patterns in one and the same photomask. CONSTITUTION:The circuit patterns A-C are inserted into the photomask 1. Moreover, areas S1 and S2 are provided so as to shield light for exposure. When only the circuit pattern A is transferred onto a wafer, shielding plates B1-B4 are used so as not to be exposed with the light for exposure on other areas. In this state, a reducing projecting exposer is used, whereby only the circuit pattern A is transferred onto the wafer. Thus, a pattern completely different from the circuit patterns can be formed with high accuracy on a specified position on the wafer in a short time.

Method for exposing thick film resist

Abstract: PURPOSE:To improve the yield in the number of the chips to be formed by exposing a photoresist film by using a photomask having such a surface which projects toward a wafer formed with the photoresist film in a manner that the mask pattern comes into tight contact with the part, except the peripheral part, of the wafer CONSTITUTION:The photomask 10 is formed to the sheet thickness (about >=02mm) smaller than the original sheet thickness in the part except a circular region 12 inclusive of the mask pattern 11 so that the part of the mask pattern 11 projects The photomask 10 formed in such a manner is brought into tight contact with the wafer 13 on which the thick photoresist film 14 is previously applied The photoresist is then exposed The tight contact of the photoresist 14 and the mask pattern 11 while the resist build-up part 15 in the peripheral part on the wafer 13 is averted and the consequent correct exposing are thus enabled by using the photomask 10 having such surface which projects in the mask pattern part 11 The yield in the number of the chips to be formed is thereby improved

The Application Of Ion Beam Assisted Deposition Of Chrome To Photomask Repair

Abstract: The MicroBeam NanoFix-50 photomask repair system and the NanoFab-150 nanolithography system are advanced focused ion beam systems which can produce highintensity beams having current densities exceeding 5A/cm 2 . When such a high current density beam interacts with a solid, significant sputtering, heating, and implantation result. Localized power densities up to 750kW/cm 2 can be present. In addition, ambient gas molecules impact the surface under bombardment, interacting physically and chemically, modifying the top atomic layers of the solid. The conditions at the beam impact point are thus extreme and complex.

Photomask pattern producing method

Abstract: PURPOSE:To form a precise resist pattern having a high degree of pattern faithfulness by inserting a dummy pattern among photomask patterns where the exposure intensity is high. CONSTITUTION:Black colored rectangular areas (dummy patterns) 4 are inserted among conventional rectangular patterns where the exposure intensity is high 3. The black patterns have a width of about 0.1-0.2mum which is selected in such a way that the width can become narrower than the wavelength of the exposure light source of an exposure device and, at the same time, the patterns are not transferred to the resist. The exposure quantity of the part 3 of the resist pattern formed of the photomask pattern containing the dummy patterns 4 is reduced and uniformized with the other area. Therefore, a resist pattern which is excellent in the degree of pattern faithfulness is formed.

Production of semiconductor integrated circuit device

Abstract: PURPOSE: To substantially prevent the adhesion of foreign matter to a photomask by treating the rear surface side of the light shielding pattern forming surface of the photomask with a silane-coupling agent to lower the surface free energy thereof. CONSTITUTION: The rear surface side of the light shielding pattern 3 forming surface is treated with the silane-coupling agent 9, by which the surface free energy thereof is lowered. Namely, the surface of the photomask 1 is treated with the silane-coupling agent 9 to chemically combine the silanol group on the surface of the photomask 1 to the silane-coupling agent 9, by which the surface of the photomask 1 is reformed to the hydrophobic and small surface free energy state. The adhesion of the foreign matter on the photomask is substantially prevented in this way and even the foreign matter once adhered thereto is easily removed. COPYRIGHT: (C)1990,JPO&Japio

Photomask Limitations And Directions

Abstract: In the vast world of integrated circuits mask making is often taken for granted. This was particularly true a decade ago when the availability of a commercial a-beam machine, MEBES, considerably improved the accuracy of photomasks and simplified the manufacturing process. At present we have the capability to meet today's needs [~ 0.9 micron design rules] but we do not have the capabilities for the next reduction in design rules [~ 0.5 micron in ~1990/1]. Pattern generators, resist, measuring equipment, and defect detection are all suspect as we push photomask tolerances into the sub-micron region. This talk will review some of the limitations in today's photomask fabrication and some of the opportunuities that lie ahead.

Production of photomask

Abstract: PURPOSE:To produce the photomask with high accuracy by applying a resist to a metallic plate, executing pre-baking, radiating an electron beam or ultraviolet rays, thereafter, bringing a chrome film to vapor-deposition and executing the development and etching CONSTITUTION:A chrome film 2 is formed on a quartz substrate 1, an EB negative resist 3 is applied on a metallic plate, pre-baking is executed, and thereafter, an electron beam 4 or ultraviolet rays is radiated on a prescribed area Thereafter, when a chrome film 5 is brought to vapor-deposition on the whole surface of the plate by a spattering device, and a dip development is executed, the resist 3 of an unexposed part is melted In this case, the chrome 5 which is brought to vapor-deposition onto the resist 3 of the unexposed part is also eliminated together with the resist 3 Subsequently, when etching is executed by a dry etching device, the chrome film 2 of the part where the resist 3 is melted and the chrome film 5 which is brought to vapor-deposition onto the resist 3 of the part which is irradiated by the electron beam 4 are brought to etching, and in the end, by peeling off the resist 3, a desired mask pattern is obtained In such a way, the photomask can be manufactured with high accuracy

Exposing method and photomask blank used in this exposing method and holder for photomask blank

Abstract: PURPOSE:To simplify an operation for mounting a photomask blank to a holder by providing a contact member connected electrically to a light shielding film on the front face of a substrate to the rear face of the substrate and executing exposing while releasing the electric charge accumulated in the light shielding film to the outside through this contact member. CONSTITUTION:The light shielding film 12a, connecting film 12b and contact film 12a as the contact member respectively consisting of a light shieldable electrically conductive material such as chromium are formed on the front face 11a, side face 11b, and rear face 11c of the light transmittable substrate 11, by which the photomask blank 13 is constituted. The light shielding film 12a is electrically connected to the contact film 12c via the connecting film 12b. The exposing is executed while the electric charge accumulated in the light shielding film 12a is released to the outside through the contact film 12c. The operation for mounting the photomask blank 13 to the holder 15 of the photomask blank 13 at the time of the exposing is thereby simplified.

Manufacture of active matrix substrate for liquid crystal display panel

Abstract: PURPOSE:To reduce the cost of a photomask by using patterns which are common, but inverted for the patterning of an electrode film and the patterning of an insulating film CONSTITUTION:The electrode film 2 and semiconductor film 6 are adhered to the entire surface in order and then patterned in the opposite order by photoetching When the electrode film 2 is patterned, the pattern of the semiconductor film 6 which is photoetched before it serves as a mask, so this is utilized to use the pattern for photoetching the electrode film 2 as a pattern which is common to the pattern for photoetching the insulating film 7 thereafter, but mutually opposite or inverted in positive-negative relation Therefore, the photomask can be used in common for the patterning of the electrode film 2 and insulating film 7 Consequently, the rate of the photomask in the manufacture cost is reduced to rationalize the manufacture of the display panel

Inspection of photoresist pattern

Abstract: PURPOSE:To check the state of the formation of photoresist patterns extremely simply at low cost by simultaneously forming photoresist patterns for inspection, which are arranged at regular intervals in both the vertical direction and the lateral direction and line width of which is thinned gradually, near the desired photoresist patterns. CONSTITUTION:When a metallic film electrode film 2 is formed onto a wafer substrate 1, photoresists 3 are applied onto the surface of the film 2 and desired patterns are exposed and shaped onto the resist films 3 by using a photomask, photoresist patterns 4 for inspection are exposed onto the resist film 3 near the desired patterns by the photomask. When the photoresists in non-exposure sections are removed through processing after the exposure, the photoresist patterns 4 for inspection are shaped near the desired photoresist patterns together with the desired photoresist patterns.

Optical recorder and manufacture thereof

Abstract: PURPOSE: To obtain an optical recording member effectively used for massreproduction in industrial scale by forming a part of low reflectivity by the roughening treatment when an information recording pattern is formed on a base with a part of high reflectivity and the part of low reflectivity formed by the coarsened part having the light scattering property. CONSTITUTION: A photoresist layer 11 of 4000-20000 Å thickness is uniformly formed on a light transmittable substrate 10, and a photomask 12 formed corresponding to the information recording pattern is overlapped to the same to perform the patterning exposure. Then the coarsening exposure is performed with a glass plate 17 of which one face is coarsened with the fine irregularity. Then the photoresist layer 11 is developed, and the pattern of the photomask 12 is transferred onto the light transmittable substrate 10. Then a thin film layer of the light reflective material or optical recording material 13 is deposited, and a substrate 15 made of polyvinyl chloride or the like is adhered to the same to obtain the optical recording member having the part of high reflectivity 13b and the part of low reflectivity 13c.

Fabrication of 0.5 µm MOS Test Devices by Application of X-ray Lithography at All Levels

Abstract: Functioning 0.5 gm N -MOS test devices have been fabricated by means of X -ray lithography atall fourlevels. All exposures were carried out with synchrotron radiation of the BESSY storage ring in Berlin. This paper describes the performance of X -ray exposure and the resist system with regard to mask patternplacement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1 a) in x and y direction and overall linewidth variation of 23 nm (1 a) within a 4 inch wafer on etched poly -Si structureshave been achieved. Electrical results of 0.5 gm N -MOS transistors with long channel behaviour up to3.5 V supply voltage will be shown. 1. Introduction High structural resolution down to 0.2 µm and surface material and wafer topography independent patterntransfer on large exposure areas are the requirements for the next generation of lithography processesfor mass production of high density integrated circuits.X -ray lithography with synchrotron radiation is currently one of the most promising methods to meetthese demands due to the high depth of focus and the lack of reflection. The insensitivity to organic

Photomask jig for manufacture of printed-circuit board

Abstract: PURPOSE:To obtain a photomask jig whose size is not changed with the passage of time and whose durability is high by a method wherein a circuit pattern of a metal film is formed on bonding faces of a pair of glass sheets which are positioned and bonded via a base material. CONSTITUTION:A Cr thin film 12 is formed on a glass sheet 10 where a through hole 11a to be used for a coarse alignment pin 17 during a bonding operation, a through hole 11b to be used of a positioning pin 18 of a base material 21 to be used as a printed-circuit board and a reference hole 11c for a circuit pattern have been formed; after that, a photosensitive resist film 13 is formed and is exposed to light so that a prescribed circuit pattern can be obtained. Then, this assembly is developed and etched; the resist film 13 is removed; a pair of photomask jigs 15 where prescribed Cr patterns 16 have been formed are obtained. The coarse alignment pins 17 and the positioning pins 18 are inserted and fixed at one jig 15; the upper jig and the lower jig 15 are connected by using hinges 19 in such a way that these jigs can be opened and closed. When the substrate 21 is exposed to light, the substrate 21 is fixed between the upper jig and the lower jig 15; whereby it is exposed to light from both faces.