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Showing papers on "Tantalum capacitor published in 1969"


Patent
05 May 1969
TL;DR: In this article, a technique for the fabrication of tantalum-based resistors and capacitors on a single substrate involves a series of process steps wherein an anodic tantalum oxide film initially formed on areas destined for use as either resistors or capacitors serves as an etch stop when removing subsequently deposited tantalum components therefrom.
Abstract: A technique for the fabrication of tantalum-based resistors and capacitors on a single substrate involves a series of process steps wherein an anodic tantalum oxide film initially formed on areas destined for use as either resistors or capacitors serves as an etch stop when removing subsequently deposited tantalum components therefrom.

25 citations


Patent
05 Dec 1969
TL;DR: In this article, a ternary niobium-zirconium-titanium alloy with an oxide film on the electrode surface was used as capacitor dielectric.
Abstract: Electric capacitor comprising an electrode in powder or fabricated part form (e.g. wire or sheet) made of a ternary niobium-zirconium-titanium alloy with an oxide film on the electrode surface as capacitor dielectric. The alloy is selected as to composition and treated to produce and retain the Beta (body-centered cubic) phase. The resultant product affords highcapacitor stability and low leakage approaching the characteristics of the more expensive tantalum at a capacitance cost comparable to or better than that of niobium.

15 citations


Patent
08 Dec 1969
TL;DR: To improve the voltage breakdown and leakage current of solid electrolytic capacitors, the dielectric layer is reenforced by an additional layer of silicon nitride, silicon dioxide or increasing the thickness of the original dielectrics layer as discussed by the authors.
Abstract: To improve the voltage breakdown and leakage current of solid electrolytic capacitors, the dielectric layer is reenforced by an additional layer of silicon nitride, silicon dioxide or increasing the thickness of the original dielectric layer.

11 citations


Patent
09 Jun 1969
TL;DR: In this paper, a thin film capacitor with aluminum as one electrode and any suitable metal such as gold, as the other electrode was proposed. But the capacitance of the A1-A1203 interface was not considered.
Abstract: A thin film capacitor suitable for microelectronic circuit applications using aluminum as one electrode and any suitable metal, such as gold, as the other electrode. The dielectric is a metallic oxide of high dielectric constant, such as Ta205, contacted directly by the gold electrode but having a thin film of A1203 interposed between it and the aluminum electrode. The relatively high barrier of the A1-A1203 interface prevents the injection of electrons from the metal into the dielectric and greatly reduces the dissipation and rectifying tendency of the capacitor.

9 citations


Patent
10 Apr 1969
TL;DR: In this article, a non-porous tantalum pAD is attached to the polygonal body of a tantalm-sintered pellet and after anodization, a onowetting, high-temperature, and high-temperance resistance-coating is applied over the oXide film covering the pad.
Abstract: A SOLID ELECTROLYTE TANTALUM CAPACITOR IS PROVIDED WHEREIN THE WIRE CONNECTION TO THE TANTALUM SINTERED PELLET IS ELIMINATED. A NONPOROUS TANTALUM PAD IS PRESSED OR WELDED TO THE PELLET BODY AND, AFTER ANODIZATION, A ONOWETTING, HIGH-TEMPERATURE RESISTANCE COATING IS APPLIED OVER THE OXIDE FILM COVERING THE PAD. THE COATING ACTS TO MASK THE PAD FROM SUBSEQUENT SEMICONDUCTOR DEPOSITION. AN ANODE CONNECTION CAN THEN BE MADE EITHER BY EXPOSING THE SURFACE OF THE TANTALUM PAD OR BY WELDING THROUGH THE MASKING AND UNDERLYING OXIDE TO THE PAD SURFACE.

7 citations


Patent
10 Apr 1969
TL;DR: In this article, a TANTALUM SINTERED PELLET is shown to be non-porous to ANODIZING and SEMICONDUCTOR DEPOSITION SOLUTIONS.
Abstract: A SOLID ELECTROLYTE TANTALUM CAPACITOR IS PROVIDED WHEREIN THE WIRE CONNECTIN TO THE TANTALUM SINTERED PELLET IS ELIMINATED. A PORTION OF THE PELLET IS RENDERED NONPOROUS TO ANODIZING SOLUTIONS AND SEMICONDUCTOR DEPOSITION SOLUTIONS. FOLLOWING FORMATION OF OXIDE AND SOLID ELECTROLYTE DEPOSITION, THE NONPOROUS AREA IS EXPOSED, REANODIZED, AND REEXPOSED TO FORM A SEPARATING MARGIN AND THE ANODE CONNECTION MADE DIRECTLY TO THIS REEXPOSED NONPOROUS AREA OF THE PELLET.

7 citations


Patent
29 Sep 1969
TL;DR: In this article, the authors report that they were prepared by reactively pushing HAFNIUM DIOXIDE UPON an ALUMINUM ELECTRODE, SUBJECTing the RESULTANT ASSEMBLY to ELECTROLYTIC ANODIZATION and DEPOSITING a COUNTERELECTRODE thereon.
Abstract: HAFNIUM FILM CAPACITORS ARE PREPARED BY REACTIVELY SPUTTERING HAFNIUM DIOXIDE UPON AN ALUMINUM ELECTRODE, SUBJECTING THE RESULTANT ASSEMBLY TO ELECTROLYTIC ANODIZATION AND DEPOSITING A COUNTERELECTRODE THEREON.

2 citations


Patent
13 Jan 1969
TL;DR: In this paper, a solid electrolytic capacitor with a charge transfer complex disposed in place of the usual electrolyte (paste or manganese dioxide), the acceptor being an organic substance having oxidizing property against aluminum, tantalum etc., was selected so as to decrease the resistivity of the complex compound as much as possible.
Abstract: A solid electrolytic capacitor with a charge transfer complex disposed in place of the usual electrolyte (paste or manganese dioxide), the acceptor being an organic substance having oxidizing property against aluminum, tantalum etc. and the donor being selected so as to decrease the resistivity of the complex compound as much as possible; the characteristic being that through the use of the organic semiconductor electrolyte the self-healing of oxide film is made possible.

2 citations


Patent
14 Nov 1969
TL;DR: A wet pellet electrolytic tantalum capacitor with a single matched hermetic glass to tantalum seal and a reverse voltage capability is described in this paper, where the glass is matched to the tantalum surface.
Abstract: A wet pellet electrolytic tantalum capacitor having a single matched hermetic glass to tantalum seal and provided with a reverse voltage capability.

1 citations


Patent
Michel Perigord1
07 Oct 1969