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A. F. Tsatsul’nikov
Researcher at Russian Academy of Sciences
Publications - 224
Citations - 3518
A. F. Tsatsul’nikov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 28, co-authored 224 publications receiving 3388 citations. Previous affiliations of A. F. Tsatsul’nikov include Technical University of Berlin & Saint Petersburg State University of Information Technologies, Mechanics and Optics.
Papers
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Journal ArticleDOI
Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
A. R. Kovsh,A. E. Zhukov,Nikolai A. Maleev,S. S. Mikhrin,V. M. Ustinov,A. F. Tsatsul’nikov,M. V. Maksimov,B. V. Volovik,D. A. Bedarev,Yu. M. Shernyakov,E.Yu. Kondrat'eva,Nikolai N. Ledentsov,P. S. Kop’ev,Zh. I. Alferov,Dieter Bimberg +14 more
TL;DR: In this article, the feasibility of lasing at a wavelength close to 1.3 µm is demonstrated in InAs quantum-dot structures placed in an external InGaAs/GaAs quantum well.
Journal ArticleDOI
High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
S. S. Mikhrin,A. E. Zhukov,A. R. Kovsh,Nikolai A. Maleev,A. P. Vasil’ev,Elizaveta Semenova,V. M. Ustinov,M. M. Kulagina,Ekaterina V. Nikitina,I. P. Soshnikov,Yu. M. Shernyakov,D. A. Livshits,N. V. Kryjanovskaya,D. S. Sizov,M. V. Maksimov,A. F. Tsatsul’nikov,Nikolai N. Ledentsov,Dieter Bimberg,Zh. I. Alferov +18 more
TL;DR: In this article, a record external differential efficiency of 88% and the characteristic temperature of threshold current, 145 K, were obtained, and the internal losses, and also threshold and spectral characteristics, are correlated with the optical gain and radiative recombination efficiency, which are strongly dependent on the design of the active region and growth modes.
Journal ArticleDOI
Effects of reactor pressure and residence time on GaN MOVPE growth efficiency
W. V. Lundin,E. E. Zavarin,D.S. Sizov,M. A. Sinitsin,A. F. Tsatsul’nikov,A.V. Kondratyev,E.V. Yakovlev,Roman Talalaev +7 more
Journal ArticleDOI
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
A. R. Kovsh,A. E. Zhukov,A. Yu. Egorov,V. M. Ustinov,Yu. M. Shernyakov,Mikhail V. Maximov,V.V Volovik,A. F. Tsatsul’nikov,Yu.V Musikhin,Nikolai N. Ledentsov,P. S. Kop’ev,Dieter Bimberg,Zh. I. Alferov +12 more
TL;DR: In this article, an array of (In,Al)As QDs demonstrating considerably higher density than Al-free QDs as nucleation centers for the injection laser formation was used.
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Study of GaN doping with carbon from propane in a wide range of MOVPE conditions
W. V. Lundin,A. V. Sakharov,E. E. Zavarin,D. Yu. Kazantsev,B. Ya. Ber,M. A. Yagovkina,Pavel N. Brunkov,A. F. Tsatsul’nikov +7 more
TL;DR: In this article, a complex study of intentional GaN carbon doping from propane during MOVPE was performed in a wide range of growth conditions, and a strong dependence of carbon doping efficiency on growth rate and ammonia flow was revealed.