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A. R. Kovsh
Researcher at Russian Academy of Sciences
Publications - 304
Citations - 6017
A. R. Kovsh is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 303 publications receiving 5847 citations. Previous affiliations of A. R. Kovsh include Industrial Technology Research Institute.
Papers
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Journal ArticleDOI
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
Sasan Fathpour,Zetian Mi,P. K. Bhattacharya,A. R. Kovsh,S. S. Mikhrin,Igor Krestnikov,A. V. Kozhukhov,N. N. Ledentsov +7 more
TL;DR: In this paper, a self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped laser and to analyze the measured data.
Journal ArticleDOI
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
N. N. Ledentsov,A. R. Kovsh,A. E. Zhukov,Nikolay A. Maleev,S. S. Mikhrin,A. P. Vasil’ev,Elizaveta Semenova,Mikhail V. Maximov,Yu. M. Shernyakov,N. V. Kryzhanovskaya,V. M. Ustinov,Dieter Bimberg +11 more
TL;DR: Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs-InGaAlAs lasers grown on GaAs substrates by molecular beam epitaxy as discussed by the authors.
Journal ArticleDOI
InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency
A. R. Kovsh,Nikolay A. Maleev,A. E. Zhukov,S. S. Mikhrin,A. P. Vasil’ev,Yu. M. Shernyakov,Mikhail V. Maximov,D.A. Livshits,V. M. Ustinov,Zh. I. Alferov,N. N. Ledentsov,Dieter Bimberg +11 more
TL;DR: In this article, multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots were used to enhance the optical gain of quantum dot laser emitting around 1.3 µm.
Journal ArticleDOI
1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Yu. M. Shernyakov,D. A. Bedarev,E.Yu. Kondrat'eva,P. S. Kop’ev,A. R. Kovsh,Nikolay A. Maleev,Mikhail V. Maximov,S. S. Mikhrin,A. F. Tsatsul’nikov,V. M. Ustinov,B. V. Volovik,A. E. Zhukov,Zh. I. Alferov,N. N. Ledentsov,Dieter Bimberg +14 more
TL;DR: In this paper, low threshold current density (Jth = 65 A/cm2) operation near 1.3 µm at room temperature (RT) was realized for lasers using InAs/InGaAs/GaAs quantum dots (QDs).
Journal ArticleDOI
Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth
F. Hopfer,Alex Mutig,Matthias Kuntz,Gerrit Fiol,Dieter Bimberg,N. N. Ledentsov,Vitaly Shchukin,S. S. Mikhrin,D. L. Livshits,Igor Krestnikov,A. R. Kovsh,N. D. Zakharov,Peter Werner +12 more
TL;DR: In this article, a singlemode vertical-cavity surface-emitting laser based on dense arrays of stacked sub-monolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz.