W
W. V. Lundin
Researcher at Ioffe Institute
Publications - 162
Citations - 1479
W. V. Lundin is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Epitaxy & Light-emitting diode. The author has an hindex of 17, co-authored 157 publications receiving 1323 citations. Previous affiliations of W. V. Lundin include Petersburg Nuclear Physics Institute & Russian Academy of Sciences.
Papers
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Journal ArticleDOI
Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1 − x N alloys
V. Yu. Davydov,I. N. Goncharuk,Alexander N. Smirnov,A. E. Nikolaev,W. V. Lundin,Alexander Usikov,A. A. Klochikhin,J. Aderhold,J. Graul,O. Semchinova,Hiroshi Harima +10 more
TL;DR: In this article, first and second-order Raman scattering in hexagonal hexagonal alloys was studied and the dependences of frequencies of all Raman-allowed optical phonons versus Al content were traced in detail in the entire composition range.
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Quantum dot origin of luminescence in InGaN-GaN structures
Igor Krestnikov,N. N. Ledentsov,Axel Hoffmann,Dieter Bimberg,A. V. Sakharov,W. V. Lundin,A. F. Tsatsul’nikov,A. S. Usikov,Zh. I. Alferov,Yu. G. Musikhin,Dagmar Gerthsen +10 more
TL;DR: In this article, a resonant photoluminescence (PL) of InGaN inclusions in a GaN matrix was reported, where the structures were grown on sapphire substrates using metal-organic chemical vapor deposition.
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Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
Igor Krestnikov,W. V. Lundin,A. V. Sakharov,V. A. Semenov,A. S. Usikov,A. F. Tsatsul’nikov,Zh. I. Alferov,N. N. Ledentsov,Axel Hoffmann,Dieter Bimberg +9 more
TL;DR: In this paper, the authors reported photopumped room-temperature surface-mode lasing at 401 nm in a InGaAlN vertical-cavity surface-emitting laser grown on a sapphire substrate using metal-organic vapor phase epitaxy.
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Hydrogen effects in III-nitride MOVPE
E.V. Yakovlev,Roman Talalaev,A.S. Segal,A.V. Lobanova,W. V. Lundin,E. E. Zavarin,M. A. Sinitsyn,A. F. Tsatsul’nikov,Andrey E. Nikolaev +8 more
TL;DR: In this paper, the influence of hydrogen on the growth of III-nitride materials by MOVPE is discussed using modeling and experimental study, and the main conclusion, coming from the modeling and supported by numerous experimental observations, is that hydrogen affects 3-nitrides in two different ways: via layer etching at elevated temperatures and via surface coverage with metal adatoms.
Journal ArticleDOI
Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
A.V. Kondratyev,Roman Talalaev,W. V. Lundin,A. V. Sakharov,A.V. Tsatsul’nikov,E. E. Zavarin,A. V. Fomin,D.S. Sizov +7 more
TL;DR: In this paper, the results of a combined experimental and modeling study of AlGaN growth in a production scale multiwafer (6×2″) AIX2000HT Planetary Reactor are reported.