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A.K. Pal
Researcher at Indian Association for the Cultivation of Science
Publications - 145
Citations - 2197
A.K. Pal is an academic researcher from Indian Association for the Cultivation of Science. The author has contributed to research in topics: Grain boundary & Thin film. The author has an hindex of 23, co-authored 131 publications receiving 2087 citations. Previous affiliations of A.K. Pal include Indian Institute of Technology Guwahati.
Papers
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Electrical conduction at low temperatures in polycrystalline CdTe and ZnTe films
TL;DR: In this paper, electrical transport in polycrystalline semiconductor films of CdTe and ZnTe in the low-temperature region is discussed in the light of quantum mechanical tunneling through the barrier and thermionic emission over the barrier, which depend on the relative magnitudes of the barrier height and barrier width in the grain boundary region.
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Determination of stress of DLC films from below band gap optical absorption measurements
TL;DR: In this article, diamond-like carbon (DLC) films were deposited by RF plasma CVD of ethylene on to mica and silicon substrates at room temperature and optical properties of the films were measured.
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Photoconductivity of Cu(In, Ga) Se2 films
TL;DR: In this paper, the grain boundary barrier height in the dark and under illumination were obtained for different x-values of CuIn1−xGaxSe2 films with partially depleted grains.
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Beryllium-doped polycrystalline GaN films: Optical and grain boundary properties
TL;DR: In this article, a GaN/Be composite target was sputtered onto fused silica substrates and optical measurements were characterized by optical measurements, while the microstructural information was obtained from scanning electron microscopy, atomic force microscopy and X-ray diffraction studies.
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Electric, galvanomagnetic and electrothermal properties of vacuum-evaporated antimony films
D. De,C.K. Ghosh,A.K. Pal +2 more
TL;DR: In this paper, the electrical resistivity, temperature coefficient of resistivity and Hall constant and thermoelectric power of antimony films were measured in situ and it was shown that holes were the majority carriers in these films.