New generation adsorbents for water treatment.

http://nathan.instras.com/documentDB/paper-44.pdf

Surface photovoltage phenomena: theory, experiment, and applications

Tin doped indium oxide (ITO) films are highly transparent in the visible region, exhibiting high reflectance in the infrared region, and having nearly metallic conductivity. Owing to this unusual combination of electrical and optical properties, this material is widely applied in optoelectronic devices. The association of these properties in a single material explains the vast domain of its applicability and the diverse production methods which have emerged. Although the different properties of tin doped indium oxide in the film form are interdependent, this article mainly focuses on the electrical aspects. Detailed description of the conduction mechanism and the main parameters that control the conductivity is presented. On account of the large varieties and differences in the fabrication techniques, the electrical properties of ITO films are discussed and compared within each technique.

/pdf/tin-doped-indium-oxide-thin-films-electrical-properties-1emmfeswwg.pdf

Tin doped indium oxide thin films: Electrical properties

▪ Abstract The synthesis of nanocrystalline diamond films from carbon-containing noble gas plasmas is described. The nanocrystallinity is the result of new growth and nucleation mechanisms, which involve the insertion of C2, carbon dimer, into carbon-carbon and carbon-hydrogen bonds, resulting in hetereogeneous nucleation rates on the order 1010 cm−2 s−1. Extensive characterization studies led to the conclusion that phase-pure diamond is produced with a microstructure consisting of randomly oriented 3–15-nm crystallites. By adjusting the noble gas/hydrogen ratio in the gas mixture, a continuous transition from micro- to nanocrystallinity is achieved. Up to 10% of the total carbon in the nanocrystalline films is located at 2 to 4 atom-wide grain boundaries. Because the grain boundary carbon is π-bonded, the mechanical, electrical, and optical properties of nanocrystalline diamond are profoundly altered. Nanocrystalline diamond films are unique new materials with applications in fields as diverse as tribolo...

Nanocrystalline diamond films1

We analyze theoretically the optical properties of ideal semiconductor crystallites so small that they show quantum confinement in all three dimensions [quantum dots (QD's)]. In the limit of a QD much smaller than the bulk exciton size, the linear spectrum will be a series of lines, and we consider the phonon broadening of these lines. The lowest interband transition will saturate like a two-level system, without exchange and Coulomb screening. Depending on the broadening, the absorption and the changes in absorption and refractive index resulting from saturation can become very large, and the local-field effects can become so strong as to give optical bistability without external feedback. The small QD limit is more readily achieved with narrow-band-gap semiconductors.

Theory of the linear and nonlinear optical properties of semiconductor microcrystallites

The growth and microstructure of Cd1−xZnxS films were studied by depositing the films on to freshly cleaved NaCl, KCl, and LiF substrates at various x values (0<x<0.27). Optimum conditions for obtaining films with larger grains and oriented growth are indicated.

Growth and microstructure of Cd 1−x Zn x S films

In-situ CdCl2 treatment in CdTe films synthesized by rapid thermal annealing technique

We investigate the relation between the amount of entanglement localized on a chosen subsystem of a multi-qubit system via local measurements on the rest of the system, and the bipartite entanglement that is lost during this measurement process. We study a number of paradigmatic pure states, including the generalized GHZ, the generalized W, Dicke, and the generalized Dicke states. For the generalized GHZ and W states, we analytically derive bounds on localizable entanglement in terms of the entanglement present in the system prior to the measurement. Also, for the Dicke and the generalized Dicke states, we demonstrate that with increasing system size, localizable entanglement tends to be equal to the bipartite entanglement present in the system over a specific partition before measurement. We extend the investigation numerically in the case of arbitrary multi-qubit pure states. We also analytically determine the modification of these results, including the proposed bounds, in situations where these pure states are subjected to single-qubit phase-flip noise on all qubits. Additionally, we study one-dimensional paradigmatic quantum spin models, namely the transverse-field XY model and the XXZ model in an external field, and numerically demonstrate a quadratic dependence of the localized entanglement on the lost entanglement. We show that this relation is robust even in the presence of disorder in the strength of the external field.

Controlling gain with loss: Bounds on localizable entanglement in multiqubit systems

In the original publication, Theorem 4.6 has been published incorrectly.

/pdf/correction-to-rich-dynamics-of-non-toxic-phytoplankton-toxic-hi56t6vyhs.pdf

Correction to: Rich dynamics of non-toxic phytoplankton, toxic phytoplankton and zooplankton system with multiple gestation delays

Growth of Ag nanostructures on Si(111)-7 × 7 surfaces has been investigated at the atomic scale regime by studying the evolution of nanoscale surface morphology with Ag coverage. Ag growth on Si(111)-7 × 7 surfaces at room temperature showed a strongly preferential height with even atomic layer thick flat top percolated islands. Here we report that the roughness scaling exponent α and growth scaling exponents β associated with such electronic growth mode are determined by statistical analysis of rough surfaces obtained from scanning tunneling micrograph images of Ag nanostructures grown on Si(111)-7 × 7 surfaces. Observed roughness and growth exponent for this system are 0.82±0.02 and 0.45±0.04, respectively.

A.K. Pal

Papers

Growth and microstructure of Cd 1−x Zn x S films

In-situ CdCl2 treatment in CdTe films synthesized by rapid thermal annealing technique

Controlling gain with loss: Bounds on localizable entanglement in multiqubit systems

Correction to: Rich dynamics of non-toxic phytoplankton, toxic phytoplankton and zooplankton system with multiple gestation delays

Growth of Percolated ag Nanostructures on Si(111)-(7 × 7) Surfaces