Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.

Microstrip filters for RF/microwave applications

Disclosed is an apparatus for use in wireless energy transfer, which includes a first resonator structure configured to transfer energy non-radiatively with a second resonator structure over a distance greater than a characteristic size of the second resonator structure. The non-radiative energy transfer is mediated by a coupling of a resonant field evanescent tail of the first resonator structure and a resonant field evanescent tail of the second resonator structure.

Wireless energy transfer

The electromagnetic energy transfer device includes a first resonator structure receiving energy from an external power supply. The first resonator structure has a first Q-factor. A second resonator structure is positioned distal from the first resonator structure, and supplies useful working power to an external load. The second resonator structure has a second Q-factor. The distance between the two resonators can be larger than the characteristic size of each resonator. Non-radiative energy transfer between the first resonator structure and the second resonator structure is mediated through coupling of their resonant-field evanescent tails.

Wireless non-radiative energy transfer

Described herein are improved capabilities for a source resonator having a Q-factor Q 1 >100 and a characteristic size x 1 coupled to an energy source, and a second resonator having a Q-factor Q 2 >100 and a characteristic size x 2 coupled to an energy drain located a distance D from the source resonator, where the source resonator and the second resonator are coupled to exchange energy wirelessly among the source resonator and the second resonator.

Wireless energy transfer systems

An overview of recent progress in the research and development of micromachined devices for use in wireless communication subsystems is presented. Among the specific devices described are tunable micromachined capacitors, integrated high-Q inductors, micromachined low-loss microwave and millimeter-wave filters, low-loss micromechanical switches, microscale vibrating mechanical resonators with Q's in the tens of thousands, and miniature antennas for millimeter-wave applications. Specific applications are reviewed for each of these components with emphasis on methods for miniaturization and performance enhancement of existing and further wireless transceivers.

/pdf/micromachined-devices-for-wireless-communications-47hz8mr1oo.pdf

Micromachined devices for wireless communications

An electronically tunable filter at 1 GHz is presented in this paper. The filter uses a suspended substrate design and commercially available varactors for filter tuning. The filter has a 60% tuning range from 700 MHz to 1.33 GHz with a low insertion loss (better than 3 dB from 1 to 1.33 GHz). This paper discusses the effects of the varactor series resistance and the electrical length of the distributed resonator on the overall resonator quality factor and filter insertion loss. The input third-order intermodulation product intercept point was measured to be better than 17 dBm across the entire tuning range.

A varactor-tuned RF filter

A high quality-factor, tunable radio frequency or microwave resonator is disclosed. The resonator includes one or more microelectromechanical switches positioned along its length. The switches are comprised of metal membrane bridges spanning the microstrip resonator. The bridges are connected to radial stubs that comprise reactive loads. An electrostatic potential differential between the bridge and microstrip resonator causes the bridge to collapse, thereby coupling a radial stub to the microstrip. The imposition of the reactive loads on the resonator causes the resonant frequency to change. Multiple resonators employed in a filter configuration can be variably coupled using microelectromechanical bridges that engage or disengage capacitive air gaps between two microstrip lines, to control filter bandwidth over wide tuning ranges.

High quality-factor tunable resonator

High-performance planar micromachined filters at 37 and 60 GHz are presented. The filters consist of a 3.5% bandwidth two-pole Chebyshev filter with transmission zeros at 37 GHz, 2.7% and 4.3% bandwidth four- and five-pole Chebyshev filters at 60 GHz, and an 8% bandwidth elliptic filter at 60 GHz. Silicon micromachining techniques combined with micropackaging have been applied to allow for very high-Q resonators resulting in low-loss filters. The 37-GHz two-pole filter exhibits a 2.3-dB port-to-port insertion loss. The 2.7% and 4.3% four- and five-pole Chebyshev filters at 60 GHz exhibit 2.8- and 3.4-dB insertion loss, and the 8% elliptic filter exhibits a 1.5-dB insertion loss. These values show a large reduction of insertion loss compared to conventional planar techniques, and can be used for planar low-cost millimeter-wave wireless communication systems.

Low-loss micromachined filters for millimeter-wave communication systems

This paper presents a state-of-the-art discrete RF microelectromechanical systems (MEMS) tunable filter designed for 25-75-MHz operation. This paper also presents an enhanced model of the RF MEMS switch, which is used for accurate prediction of the tunable filter response. The two-pole lumped-element filter is based on digital capacitor banks with on-chip metal-contact RF MEMS switches and lumped inductors, and results in a tuning range of 3:1 with fine frequency resolution, and a return loss better than 13 dB for the entire tuning range. The relative bandwidth of the filter is 4 plusmn 1% over the tuning range and the insertion loss is 3-5 dB, limited mostly by the inductor Q and the switch loss. The IIP3 measurements prove that tunable filters with metal-contact series RF MEMS switches show extremely linear behavior (IIP3 > 68 dBm).

A 25–75-MHz RF MEMS Tunable Filter

This paper presents the theory and measurements of a mechanical parametric-effect amplifier with a 200-kHz input signal and a 1.84-MHz output signal. The device used is a MEMS time-varying capacitor which is composed of an array of low-stress metallized silicon-nitride diaphragms, and is pumped by a large-signal voltage at 1.64 MHz. This induces a large change in the capacitance, and results in parametric amplification of an input signal at 200 kHz. The parametric amplifier capacitance is 500 pF, resulting in an output impedance of 140 /spl Omega/. A higher impedance can also be achieved with a lower capacitance. To our knowledge, this device is the first-ever MEMS mechanical up-converter parametric-effect amplifier developed with an up-conversion ratio of 9:1. The measurements agree very well with theory, including the effect the series resistance and the and of the MEMS time-varying capacitor. The application areas are in amplifiers which operate at very high temperatures (200/spl deg/C-600/spl deg/C), under high particle bombardment (nuclear applications), in non-semiconductor-based amplification, and in low-noise systems, since parametric amplifiers do not suffer from thermal, shot, or 1/f noise problems.

A.R. Brown

Papers

A varactor-tuned RF filter

High quality-factor tunable resonator

Low-loss micromachined filters for millimeter-wave communication systems

A 25–75-MHz RF MEMS Tunable Filter

A novel parametric-effect MEMS amplifier