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A. Tarakji
Researcher at University of South Carolina
Publications - 20
Citations - 1329
A. Tarakji is an academic researcher from University of South Carolina. The author has contributed to research in topics: Field-effect transistor & Leakage (electronics). The author has an hindex of 15, co-authored 20 publications receiving 1305 citations.
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Journal ArticleDOI
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
M. Asif Khan,Xiaobo Sharon Hu,A. Tarakji,Grigory Simin,J. W. Yang,Remigijus Gaska,Michael Shur +6 more
TL;DR: In this paper, an AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) were developed for high power microwave and switching devices.
Journal ArticleDOI
Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors
Xiaobo Sharon Hu,Alexey Koudymov,Grigory Simin,J. W. Yang,M. Asif Khan,A. Tarakji,Michael Shur,R. Gaska +7 more
TL;DR: In this paper, a metal-insulator-semiconductor heterostructure field effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator is presented.
Journal ArticleDOI
Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
Grigory Simin,Alexey Koudymov,A. Tarakji,Xiaobo Sharon Hu,J. W. Yang,M. Asif Khan,Michael Shur,R. Gaska +7 more
TL;DR: In this paper, the authors show that under pulsed gate bias, the current collapse results from increased source-gate and gate-drain resistances but not from the channel resistance under the gate.
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SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs
Grigory Simin,Alexey Koudymov,H. Fatima,Jianping Zhang,Jinwei Yang,M. Asif Khan,Xiaobo Sharon Hu,A. Tarakji,R. Gaska,Michael Shur +9 more
TL;DR: In this paper, a novel nitride-based field effect transistor combining SiO/sub 2/ gate isolation and an AlGaN/InGaN-GaN double heterostructure design (MOSDHFET) is reported.
Journal ArticleDOI
Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors
A. Tarakji,Grigory Simin,N. Ilinskaya,Xiaobo Sharon Hu,A. Kumar,Alexey Koudymov,J. W. Yang,M. Asif Khan,Michael Shur,R. Gaska +9 more
TL;DR: In this article, the authors investigated the mechanism of radio-frequency current collapse in GaN-AlGaN heterojunction field effect transistors (HFETs) and concluded that the transverse electric field across the wideband gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate-drain spacing is responsible for the current collapse.