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Abdulmecit Türüt
Researcher at Atatürk University
Publications - 147
Citations - 4575
Abdulmecit Türüt is an academic researcher from Atatürk University. The author has contributed to research in topics: Schottky barrier & Schottky diode. The author has an hindex of 38, co-authored 145 publications receiving 4284 citations.
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Interpreting the nonideal reverse bias c-v characteristics and importance of the dependence of schottky-barrier height on applied voltage
TL;DR: In this paper, an attempt related to the charging behavior of interface states to the nonideal forward bias currentvoltage (I-V) and the reverse bias capacitance-voltage characteristics of AlnSi Schottky barrier diodes was made.
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On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts
TL;DR: In this paper, the currentvoltage and capacitance-voltage characteristics of Ni/n-GaN Schottky diodes have been measured in the temperature range of 80-400 K with steps of 20 K, and the modified activation energy plot according to the barrier inhomogeneity model has given the Richardson constant A∗ as 80 or 85 A/(cm2 K2)
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Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101∕n-Si and Sn/rhodamine-101∕p-Si Schottky barrier diodes
TL;DR: In this paper, a nonpolymeric organic compound rhodamine-101 (Rh101) film has been formed by means of the evaporation process and the Sn/rhodamine101/Si contacts have been fabricated.
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Some electrical properties of polyaniline/p-Si/Al structure at 300K and 77K temperatures
TL;DR: In this article, the electrical characterization of PANI/p-Si/Al structure has been investigated by using current-voltage (I-V), capacitance voltages (C-V) and capacitance-frequency (Cf) characteristics.
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Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer
E. Ayyildiz,Abdulmecit Türüt,Hasan Efeoglu,Sebahattin Tüzemen,Mustafa Sağlam,Y.Kemal Yoğurtçu +5 more
TL;DR: In this paper, a novel calculation method has been developed by taking into account the applied voltage drop across the interfacial layer (V i ), where the parameters obtained by accounting for the voltage drop V i have been compared with those obtained without considering the above voltage drop.