The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.

Recent advances in Schottky barrier concepts

The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

The physics and chemistry of the Schottky barrier height

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Extraction of electronic parameters of Schottky diode based on an organic Orcein

After annealing in a H2 atmosphere at different temperatures, 100-oriented n-GaAs substrates were metallized with Au and Ti layers of different thicknesses to form Au/n-GaAs and Ti/n-GaAs Schottky diodes. The Schottky barrier height (SBH) variation and its dependence on subsequent N2 annealing for these Schottky diodes have been studied by different measurement techniques (I–V, C–V and BEEM) to obtain reliable values. These methods show that pre-metallization annealing leads to a less homogeneous metal semiconductor (MS) interface. In case of thick Au layers the effective barrier height is reduced as soon as the H2 annealing temperature reaches 300 °C. However, GaAs samples covered with thin Au layers or Ti layers do not exhibit such a barrier height reduction. The lower value in the case of thick Au layers is attributed to H+ groups, present at the interface due to the annealing in H2 atmosphere, forming interfacial dipoles with Au, leading to an inhomogeneous barrier and a decrease of the effective barrier height. It seems that these dipoles disappear again in the case of thin Au layers or are not formed with Ti. Post-metallization N2 annealing at higher temperatures lowers the barrier height for all samples. The resulting barrier inhomogeneities are explained and analysed using the bond polarization theory of Tung (2001 Phys. Rev. B 64 205310, 2001 Mater. Sci. Eng. R 35), a recent Schottky barrier formation model and the pinch-off model (Tung 1992 Phys. Rev. B 45 13509).

Abdulmecit Türüt

Papers

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

Extraction of electronic parameters of Schottky diode based on an organic Orcein

Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes

High-barrier height Sn/p-Si schottky diodes with interfacial layer by anodization process

Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer