R
R. L. Van Meirhaeghe
Researcher at Ghent University
Publications - 146
Citations - 4881
R. L. Van Meirhaeghe is an academic researcher from Ghent University. The author has contributed to research in topics: Schottky barrier & Schottky diode. The author has an hindex of 37, co-authored 146 publications receiving 4656 citations.
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On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
TL;DR: In this paper, the difference in apparent barrier height as obtained from capacitancevoltage and current-voltage measurements on Al/p-InP Schottky barriers was explained by introducing a distribution of barrier heights over the contact area and a temperature dependence of the real barrier height.
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Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
TL;DR: In this article, the electron tunnelling in device grade ultra-thin 3-6 nm n + poly-Si/SiO 2 /n-Si structures has been analyzed.
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Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
Shiyang Zhu,R. L. Van Meirhaeghe,Christophe Detavernier,Felix Cardon,Guo-Ping Ru,Xin-Ping Qu,Bing-Zong Li +6 more
TL;DR: In this article, the forward currentvoltage characteristics of epitaxial CoSi 2 contacts grown by Ti-interlayer mediated epitaxy (TIME) scheme on n-type Si substrates of both (100) and (111) orientations are studied in the temperature range from 80 to 300 k.
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In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
TL;DR: In this paper, in-situ X-ray Diffraction was used to study the MIC process for 20 different metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al and Ag).
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Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts
TL;DR: In this paper, the change in barrier height caused by sputter metallization of contacts on both GaAs and InP substrates, and using evaporated contacts as a reference, is investigated.