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Abhijit Biswas

Researcher at Indian Institute of Science

Publications -  67
Citations -  1069

Abhijit Biswas is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Thin film & Perovskite (structure). The author has an hindex of 12, co-authored 51 publications receiving 796 citations. Previous affiliations of Abhijit Biswas include Rice University & Indian Institute of Science Education and Research, Pune.

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Effect of intracerebroventricular injection of Ti-02 nanoparticles on complex behavior in the rat

TL;DR: The significance and basic process of bone tissue engineering along with different bionanomaterial bone scaffolds made of nanocomposites and nanostructured biopolymers/bioceramics and the prerequisite biomechanical functions are described.
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Universal Ti-rich termination of atomically flat SrTiO3 (001), (110), and (111) surfaces

TL;DR: In this paper, the surface termination of atomically flat SrTiO3 surfaces treated by chemical etching and subsequent thermal annealing was studied for all commercially available orientations (001, (110), and (111).
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Metal insulator transitions in perovskite SrIrO3 thin films

TL;DR: In this article, the authors have grown high quality perovskite SrIrO3 thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO3 (110), DySO3(110), and NdGaO3 with increasing lattice mismatch, in order to carry out a systematic study on the transport properties.
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Controlled growth of gold nanoparticles induced by ion irradiation: An in situ x-ray diffraction study

TL;DR: In this article, the growth of nanoparticles from 4 (for pristine) to 9nm at a fluence of 1×1014ions∕cm2 was observed, in accordance with the observations made by transmission electron microscopy analyses.
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Atomically flat single terminated oxide substrate surfaces

TL;DR: In this article, a review of surface treatment procedures to achieve atomically flat surfaces with single terminating layer for various metal oxide substrates is presented, and the authors conclude that this topmost surface layer selectivity would provide an additional degree of freedom in searching for unforeseen emergent phenomena and functional applications in epitaxial oxide thin films and heterostructures with atomically controlled interfaces.