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Adam William Saxler
Researcher at Cree Inc.
Publications - 170
Citations - 6832
Adam William Saxler is an academic researcher from Cree Inc.. The author has contributed to research in topics: Layer (electronics) & Nitride. The author has an hindex of 44, co-authored 170 publications receiving 6634 citations. Previous affiliations of Adam William Saxler include Northwestern University & Micron Technology.
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Patent
Heterojunction transistors including energy barriers
TL;DR: In this article, a heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer consisting of a Group 3 nitride on the channel layer, and an energy barrier comprising a layer of a group 3 nide including indium on the barrier layer and the energy barrier.
SiC and GaN Based Transistor and Circuit Advances
J.W. Palmour,Jim W. Milligan,Jason Henning,S. T. Allen,A. Ward,P. Parikh,R.P. Smith,Adam William Saxler,M. Moore,Y. Wu +9 more
TL;DR: Significant progress has been made in the development of SiC MESFETs and MMIC power amplifier manufactured on 3-inch high purity semi-insulating (HPSI) 4H-SiC substrates.
Journal ArticleDOI
Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (10 · 0) GaN
Tomohisa Kato,P. Kung,Adam William Saxler,Chien Jen Sun,Hitoshi Ohsato,Manijeh Razeghi,Takashi Okuda +6 more
TL;DR: In this paper, two differently oriented GaN (00 · 1) and (10 · 0) epicrystals have been grown simultaneously on sapphire substrates in a low pressure MOCVD system with a fixed susceptor.
Journal ArticleDOI
Type-II superlattice photodetector on a compliant GaAs substrate
Gail J. Brown,Frank Szmulowicz,R. Linville,Adam William Saxler,K. Mahalingham,Chih-Hsiang Lin,C.H. Kuo,W. Y. Hwang +7 more
TL;DR: In this article, a type-II superlattice (SL) of InAs-InGaSb has been grown on a compliant GaAs substrate by molecular beam epitaxy.
Patent
Transistors having buried n-type and p-type regions beneath the source region
TL;DR: In this article, a non-uniform aluminum concentration AlGaN-based cap layer has been provided for wide bandgap semiconductor devices and Graphitic BN passivation structures have been provided.