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Adam William Saxler
Researcher at Cree Inc.
Publications - 170
Citations - 6832
Adam William Saxler is an academic researcher from Cree Inc.. The author has contributed to research in topics: Layer (electronics) & Nitride. The author has an hindex of 44, co-authored 170 publications receiving 6634 citations. Previous affiliations of Adam William Saxler include Northwestern University & Micron Technology.
Papers
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Proceedings ArticleDOI
8-watt GaN HEMTs at millimeter-wave frequencies
TL;DR: In this paper, field-plated short-gate-length GaN HEMTs were developed for superior large-signal performance at millimeter-wave frequencies at the state-of-the-art.
Journal ArticleDOI
Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides
D. N. Hahn,G. T. Kiehne,John B Ketterson,George K. Wong,George K. Wong,Patrick Kung,Adam William Saxler,Manijeh Razeghi +7 more
TL;DR: In this article, phase-matching optical second-harmonic (SH) generation was observed in GaN and AlN slab waveguides by tuning the output wavelength of an optical parametric amplifier, several phased-matched SH peaks were observed in the visible spectrum covering blue to red wavelengths.
Patent
Rare earth doped layer or substrate for light conversion
Steven P. Denbaars,Eric J. Tarsa,Michael Mack,Bernd Keller,Brian Thibeault,Adam William Saxler +5 more
TL;DR: In this paper, a solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers on opposite sides of the active region is described.
Journal ArticleDOI
Characterization of deep centers in bulk n-type 4H–SiC
TL;DR: In this article, defect-and impurity-related deep centers in nitrogen doped bulk n-type 4H-SiC were characterized by high temperature Hall effect and deep level transient spectroscopy (DLTS) measurements.
Patent
Thick nitride semiconductor structures with interlayer structures
TL;DR: A semiconductor structure includes a first layer of a nitride semiconductor material, a substantially unstrained nitride interlayer on the first layer, and a second layer of an n-type dopant on the second layer.