A
Adam William Saxler
Researcher at Cree Inc.
Publications - 170
Citations - 6832
Adam William Saxler is an academic researcher from Cree Inc.. The author has contributed to research in topics: Layer (electronics) & Nitride. The author has an hindex of 44, co-authored 170 publications receiving 6634 citations. Previous affiliations of Adam William Saxler include Northwestern University & Micron Technology.
Papers
More filters
Journal ArticleDOI
AlGaN ultraviolet photoconductors grown on sapphire
TL;DR: In this article, the spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature, and the carrier lifetime derived from the voltage-dependent responsivity is 0.13−0.36 ms.
Journal ArticleDOI
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
Patrick Kung,Adam William Saxler,X. Zhang,D. Walker,T. C. Wang,Ian T. Ferguson,Manijeh Razeghi +6 more
TL;DR: In this paper, the growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates using low pressure metalorganic chemical vapor deposition X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained.
Journal ArticleDOI
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
Peter Kozodoy,Y. Smorchkova,M. Hansen,Huili Xing,Steven P. DenBaars,Umesh K. Mishra,Adam William Saxler,R. Perrin,W. C. Mitchel +8 more
TL;DR: In this paper, the hole-transport properties of Mg-doped AlGaN/GaN superlattices are examined and the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the super-lattice is demonstrated.
Patent
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
TL;DR: In this paper, a nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed in the channel.
Patent
Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
TL;DR: In this paper, a non-uniform aluminum concentration AlGaN-based cap layer has been provided for wide bandgap semiconductor devices and Graphitic BN passivation structures have been provided.