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Adam William Saxler
Researcher at Cree Inc.
Publications - 170
Citations - 6832
Adam William Saxler is an academic researcher from Cree Inc.. The author has contributed to research in topics: Layer (electronics) & Nitride. The author has an hindex of 44, co-authored 170 publications receiving 6634 citations. Previous affiliations of Adam William Saxler include Northwestern University & Micron Technology.
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Patent
Heterojunction transistors including energy barriers and related methods
TL;DR: In this paper, a heterojunction transistor may include a channel layer (14), a barrier layer (16), and an energy barrier (30, 32, 34) comprising a layer of a Group III nitride including indium on the channel layer such that the channel is between the barrier layer and the energy barrier.
Journal ArticleDOI
Infrared properties of aggate2, a nonlinear optical chalcopyrite semiconductor
M. C. Ohmer,Jonathan T. Goldstein,David E. Zelmon,Adam William Saxler,S. M. Hegde,J. D. Wolf,Peter G. Schunemann,Thomas M. Pollak +7 more
TL;DR: The fundamental optical properties of AgGaTe2, a nonlinear optical semiconductor are reported in this article, which include birefringence, indices of refraction, infrared transmission, and the temperature dependence of the band gap.
Patent
Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
TL;DR: In this paper, a variable mismatch layer is configured to reduce stress in the first layer to below a level of stress resulting from growth of the second layer directly on the substrate, where the mismatch layer may be a layer having a strained in-plane lattice constant that substantially matches the unstrained lattice constants of the first layers.
Proceedings ArticleDOI
3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz
TL;DR: In this article, GaN/GaN HEMTs were scaled to 105 mm gate-width with minor gain reduction, achieving state-of-the-art performance at millimeter-wave frequencies.
Patent
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
TL;DR: In this article, a group III Nitride based field effect transistor (FET) is provided with a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage of from about -8 to about -14 volts and a temperature of about 140 °C for at least about 10 hours.