A
Adrian E. Ong
Researcher at Samsung
Publications - 24
Citations - 1373
Adrian E. Ong is an academic researcher from Samsung. The author has contributed to research in topics: Spin-transfer torque & Magnetoresistive random-access memory. The author has an hindex of 11, co-authored 24 publications receiving 1125 citations.
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Journal ArticleDOI
Basic principles of STT-MRAM cell operation in memory arrays
Alexey Vasilyevitch Khvalkovskiy,Dmytro Apalkov,Steven M. Watts,R Chepulskii,Robert Beach,Adrian E. Ong,X. Tang,A. Driskill-Smith,William H. Butler,P. B. Visscher,D. K. Lottis,Eugene Chen,Vladimir Nikitin,Mohamad Towfik Krounbi +13 more
TL;DR: The fundamental physical principles of STT-MRAM operation are discussed, covering the range from device level to chip array performance, and methodology for its development.
Journal ArticleDOI
Spin-transfer torque magnetic random access memory (STT-MRAM)
Dmytro Apalkov,Alexey Vasilyevitch Khvalkovskiy,Steven M. Watts,Vladimir Nikitin,Xueti Tang,D. K. Lottis,Kiseok Moon,Xiao Luo,Eugene Chen,Adrian E. Ong,A. Driskill-Smith,Mohamad Towfik Krounbi +11 more
TL;DR: It is shown that in-plane STT-MRAM technology, particularly the DMTJ design, is a mature technology that meets all conventional requirements for an STT -MRAM cell to be a nonvolatile solution matching DRAM and/or SRAM drive circuitry.
Journal ArticleDOI
Erratum: Basic principles of STT-MRAM cell operation in memory arrays
Alexey Vasilyevitch Khvalkovskiy,Dmytro Apalkov,Steven M. Watts,R Chepulskii,Robert Beach,Adrian E. Ong,X. Tang,A. Driskill-Smith,William H. Butler,P. B. Visscher,D. K. Lottis,Eugene Chen,Vladimir Nikitin,Mohamad Towfik Krounbi +13 more
Proceedings ArticleDOI
Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application
Suock Chung,K.-M. Rho,Suk-Chul Kim,H.-J. Suh,Dojin Kim,Hong-Gi Kim,Sung-Buk Lee,Jung-Lae Park,Hyun Mi Hwang,Sang-Min Hwang,Juyeab Lee,Y.-B. An,Jaeyun Yi,Y.-H. Seo,D.-H. Jung,Mun-Haeng Lee,Sung-Hyuk Cho,Ju-Rak Kim,G.-J. Park,Gyu-An Jin,A. Driskill-Smith,Vladimir Nikitin,Adrian E. Ong,X. Tang,Yong-ki Kim,J.-S. Rho,Sung-Hyung Park,Sung-Woong Chung,J.-G. Jeong,S. J. Hong +29 more
TL;DR: In this article, a spin-transfer torque-RAM with a 14F2 cell was integrated using modified DRAM processes at the 54nm technology node, and the basic switching performance (R-H and R-V) of the MTJ and current drivability of the access transistors were characterized at the single bit cell level.
Proceedings ArticleDOI
Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM
A. Driskill-Smith,Dmytro Apalkov,Vladimir Nikitin,X. Tang,Steven M. Watts,D. K. Lottis,K. Moon,Alexey Vasilyevitch Khvalkovskiy,R. Kawakami,X. Luo,Adrian E. Ong,Eugene Chen,Mohamad Towfik Krounbi +12 more
TL;DR: In this paper, the authors present the latest advances in in in-plane and perpendicular STT-RAM development and outline STTRAM's future prospects, applications, and roadmap.