A
A. Driskill-Smith
Researcher at Samsung
Publications - 14
Citations - 1982
A. Driskill-Smith is an academic researcher from Samsung. The author has contributed to research in topics: Spin-transfer torque & Magnetoresistive random-access memory. The author has an hindex of 12, co-authored 14 publications receiving 1680 citations.
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Journal ArticleDOI
Basic principles of STT-MRAM cell operation in memory arrays
Alexey Vasilyevitch Khvalkovskiy,Dmytro Apalkov,Steven M. Watts,R Chepulskii,Robert Beach,Adrian E. Ong,X. Tang,A. Driskill-Smith,William H. Butler,P. B. Visscher,D. K. Lottis,Eugene Chen,Vladimir Nikitin,Mohamad Towfik Krounbi +13 more
TL;DR: The fundamental physical principles of STT-MRAM operation are discussed, covering the range from device level to chip array performance, and methodology for its development.
Journal ArticleDOI
Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
Eugene Chen,Dmytro Apalkov,Z. Diao,A. Driskill-Smith,D. Druist,D. K. Lottis,Vladimir Nikitin,X. Tang,Steven M. Watts,Shengyuan Wang,Stuart A. Wolf,Avik W. Ghosh,Jiwei Lu,S.J. Poon,Mircea R. Stan,William H. Butler,Subhadra Gupta,Claudia Mewes,Tim Mewes,P. B. Visscher +19 more
TL;DR: The progress of the work on device design, material improvement, wafer processing, integration with CMOS, and testing for a demonstration STT-RAM test chip are reported, and projections based on modeling of the future characteristics of STt-RAM are projected.
Journal ArticleDOI
Spin-transfer torque magnetic random access memory (STT-MRAM)
Dmytro Apalkov,Alexey Vasilyevitch Khvalkovskiy,Steven M. Watts,Vladimir Nikitin,Xueti Tang,D. K. Lottis,Kiseok Moon,Xiao Luo,Eugene Chen,Adrian E. Ong,A. Driskill-Smith,Mohamad Towfik Krounbi +11 more
TL;DR: It is shown that in-plane STT-MRAM technology, particularly the DMTJ design, is a mature technology that meets all conventional requirements for an STT -MRAM cell to be a nonvolatile solution matching DRAM and/or SRAM drive circuitry.
Journal ArticleDOI
Spin transfer switching in dual MgO magnetic tunnel junctions
Zhitao Diao,Alex Panchula,Yunfei Ding,Mahendra Pakala,Shengyuan Wang,Zhanjie Li,Dmytro Apalkov,Hideyasu Nagai,A. Driskill-Smith,Lien-Chang Wang,Eugene Chen,Yiming Huai +11 more
TL;DR: In this article, a dual magnetic tunnel junction (MTJ) structure consisting of two MgO insulating barriers of different resistances, two pinned reference layers aligned antiparallel to one another, and a free layer embedded between the two barriers has been developed.
Journal ArticleDOI
Erratum: Basic principles of STT-MRAM cell operation in memory arrays
Alexey Vasilyevitch Khvalkovskiy,Dmytro Apalkov,Steven M. Watts,R Chepulskii,Robert Beach,Adrian E. Ong,X. Tang,A. Driskill-Smith,William H. Butler,P. B. Visscher,D. K. Lottis,Eugene Chen,Vladimir Nikitin,Mohamad Towfik Krounbi +13 more