Eugene Chen

TL;DR: In this paper, experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions were presented, and three distinct switching modes, thermal activation, dynamic reversal, and precessional process, were identified within the experimental parameter space.

TL;DR: The fundamental physical principles of STT-MRAM operation are discussed, covering the range from device level to chip array performance, and methodology for its development.

TL;DR: The progress of the work on device design, material improvement, wafer processing, integration with CMOS, and testing for a demonstration STT-RAM test chip are reported, and projections based on modeling of the future characteristics of STt-RAM are projected.

TL;DR: It is shown that in-plane STT-MRAM technology, particularly the DMTJ design, is a mature technology that meets all conventional requirements for an STT -MRAM cell to be a nonvolatile solution matching DRAM and/or SRAM drive circuitry.

TL;DR: In this article, a dual magnetic tunnel junction (MTJ) structure consisting of two MgO insulating barriers of different resistances, two pinned reference layers aligned antiparallel to one another, and a free layer embedded between the two barriers has been developed.