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Ajeet Rohatgi
Researcher at Georgia Institute of Technology
Publications - 513
Citations - 11785
Ajeet Rohatgi is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 51, co-authored 500 publications receiving 11218 citations. Previous affiliations of Ajeet Rohatgi include Carnegie Mellon University & Westinghouse Electric.
Papers
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Journal ArticleDOI
Impurities in silicon solar cells
J. R. Davis,Ajeet Rohatgi,R. H. Hopkins,P.D. Blais,P. Rai-Choudhury,J.R. McCormick,H.C. Mollenkopf +6 more
TL;DR: In this article, the effects of various metallic impurities, both singly and in combinations, on the performance of silicon solar cells have been studied and an analytic model was developed which predicts cell performance as a function of the secondary impurity concentrations.
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Analysis and performance assessment of the active frequency drift method of islanding prevention
TL;DR: In this article, the active frequency drift method (AFD), also called the frequency bias method, enables islanding detection by forcing the frequency of the voltage in the island to drift up or down.
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Determining the relative effectiveness of islanding detection methods using phase criteria and nondetection zones
TL;DR: In this article, a simplified method of determining which islanding detection methods (IDMs) are most effective is presented. But, the NDZs of several common IDMs, such as Sandia Frequency Shift (SFS) and SFS-based IDMs are not determined.
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Development of a Methodology for Improving Photovoltaic Inverter Reliability
TL;DR: This paper investigates the effects of common failure modes on the reliability of PV inverters and suggests a model framework for decomposing the inverter into subsystems for more detailed study.
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The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells
TL;DR: In this article, the authors investigated the electronic mechanisms responsible for CdCl2-induced improvement in cell performance along with possible performance limiting defects resulting from this process in molecular beam epitaxy-grown polycrystalline CdTe/CdS solar cells.