Showing papers by "Akira Kinbara published in 1976"
21 citations
18 citations
TL;DR: In this article, the electrical resistivities of thin bismuth films, either in step-up series or a fixed thickness, were measured between 4.2 and 320 K. This scatter became more pronounced with decreasing temperature and it was due to the variation of the TCR above liquid nitrogen temperature.
17 citations
TL;DR: In this article, the tunneling characteristics in thin epitaxial Bi films (thickness: 400-1200 A) were investigated. And the SiO2-Pb tunnel junctions were prepared by vacuum deposition onto freshly cleaved mica substrates in an ultrahigh vacuum system.
Abstract: The tunneling characteristics in thin epitaxial Bi films (thickness: 400–1200 A) were investigated. Bi‐SiO2‐Pb tunnel junctions were prepared by vacuum deposition onto freshly cleaved mica substrates in an ultrahigh vacuum system. The dI/dV‐V curve has a large peak at the Bi positive voltage range (150–250 mV) which can be attributed to the band structure of Bi. In the low voltage range (‖V‖<25 mV), d2I/dV2‐V curves show the peaks or dips reflecting the state density of superconducting lead. The phonon‐assisted tunneling peaks or dips in the normal state were also observed. For medium voltage range (‖V‖≳25 mV), there are several peaks or dips due to phonons of SiO2. The subband edges generated by quantum size effects were not observed, probably because the electron bands and the hole band of Bi overlap each other, located at the L and T points in the Brillouin zone, respectively.
1 citations