Journal ArticleDOI
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
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TLDR
In this article, GaN layers with a dislocation density as low as 6×107 cm-2 were grown on 2-inch-diameter sapphire wafers.Abstract:
Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO2 mask. As a result, GaN layers with a dislocation density as low as 6×107 cm-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.read more
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Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this paper, a GaN multi-quantum well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation.
Journal ArticleDOI
Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
TL;DR: In this article, the crystal orientation dependence of piezoelectric fields in wurtzite strained Ga0.9In0.1N/GaN heterostructures was analyzed.
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White light-emitting diodes: History, progress, and future
TL;DR: The history of white light-emitting diodes (LEDs) can be found in this paper, where the authors review the history of the conception, improvement, and commercialization of the white LED.
Journal ArticleDOI
Defect structure in selectively grown GaN films with low threading dislocation density
TL;DR: In this article, defect structures in GaN films grown selectively in hydride vapor-phase epitaxy (HVPE) were characterized by transmission electron microscopy (TEM) defect structures.
References
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Journal ArticleDOI
Shortest wavelength semiconductor laser diode
TL;DR: A group III nitride based separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated in this paper.
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Relaxation mechanism of thermal stresses in the heterostructure of GaN grown on sapphire by vapor phase epitaxy
TL;DR: In this paper, the authors studied the thermal strains and stresses due to the thermal expansion coefficient difference in GaN(0001)/α-Al2O3(0001) layered structures.
Journal ArticleDOI
Electronic and structural properties of GaN grown by hydride vapor phase epitaxy
TL;DR: In this paper, the electronic and structural properties of GaN were investigated for heteroepitaxial layers grown by hydride vapor phase epitaxy, and the films exhibited bound exciton photoluminescence lines with a full width at half-maximum (FWHM) of 2.42 meV at 2 K.
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Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
TL;DR: In this paper, a photopumped homoepitaxial GaN was shown to produce stimulated emission at room temperature from a homo-epitaxis layer on a small hexagonal bulk GaN prepared by sublimation.