Alan R. Krauss

TL;DR: In this paper, trananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH4(1%)/Ar gas mixture and 1%−20% nitrogen gas added.

TL;DR: In this paper, the fabrication of nanotube field emitters with an onset field as low as 0.8 V/μm is described and the low-field electron emission mechanism is discussed.

TL;DR: A major problem with the Si-based MEMS technology is that Si has poor mechanical and tribological properties as discussed by the authors, which makes it unsuitable for MEMS devices, and therefore it is not suitable for them.

TL;DR: In this article, the growth of diamond films using fullerene precursors in an argon microwave plasma was reported, a unique development achieved without the addition of hydrogen or oxygen, and it was speculated that collisional fragmentation of C60 to give C2 could be responsible for the high growth rate of the very fine-grained diamond films.

TL;DR: In this paper, the authors present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers.