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H

H. G. Busmann

Researcher at Fraunhofer Society

Publications -  4
Citations -  368

H. G. Busmann is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Diamond & Material properties of diamond. The author has an hindex of 3, co-authored 4 publications receiving 361 citations. Previous affiliations of H. G. Busmann include Argonne National Laboratory.

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Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices

TL;DR: A major problem with the Si-based MEMS technology is that Si has poor mechanical and tribological properties as discussed by the authors, which makes it unsuitable for MEMS devices, and therefore it is not suitable for them.
Journal ArticleDOI

Two- and three-dimensional ultrananocrystalline diamond (UNCD) structures for a high resolution diamond-based MEMS technology.

TL;DR: In this article, the authors demonstrate the fabrication of 2-D and 3-D phase-pure ultrananocrystalline diamond (UNCD) MEMS components by coating Si with UNCD films, coupled with lithographic patterning methods involving sacrificial release layers.

Science and technology of ultrananocrystalline diamond (UNCD) thin films for multifunctional devices

TL;DR: In this paper, a thin film deposition process has been developed that produces phase-pure ultrananocrystalline diamond (UNCD) with morphological and mechanical properties that are ideally suited for MEMS applications in general, and MMA use in particular.