There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

http://science.sciencemag.org/content/sci/294/5546/1488.full.pdf

Spintronics: a spin-based electronics vision for the future.

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

/pdf/spintronics-fundamentals-and-applications-2dx38n6phu.pdf

Spintronics: Fundamentals and applications

A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are very few 'multiferroic' materials that exhibit both of these properties, but the 'magnetoelectric' coupling of magnetic and electrical properties is a more general and widespread phenomenon. Although work in this area can be traced back to pioneering research in the 1950s and 1960s, there has been a recent resurgence of interest driven by long-term technological aspirations.

/pdf/multiferroic-and-magnetoelectric-materials-2fpof7uzog.pdf

Multiferroic and magnetoelectric materials

A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of perovskite-like La0.67Ca0.33MnOx. Epitaxial films that are grown on LaAIO3 substrates by laser ablation and suitably heat treated exhibit magnetoresistance values as high as 127,000 percent near 77 kelvin and ∼1300 percent near room temperature. Such a phenomenon could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized. Possible mechanisms for the observed effect are discussed.

http://science.sciencemag.org/content/sci/264/5157/413.full.pdf

Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films

Left-right asymmetry is expected in the scattering of electrons by magnetic impurities in metals; we present a simple calculation of the asymmetry in a virtual-bound-state model. When a magnetic field lines up the impurity moments, this left-right asymmetry should generate an extraordinary Hall effect proportional to the impurity concentration. This effect appears to occur in many magnetic alloys (e.g., ${\mathrm{Ni}}^{\ensuremath{-}}$, ${\mathrm{Cu}}^{\ensuremath{-}}$, and ${\mathrm{Au}}^{\ensuremath{-}}$ based alloys).

Left-Right Asymmetry in the Scattering of Electrons by Magnetic Impurities, and a Hall Effect

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapor deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrate that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

http://www.phy.pmf.unizg.hr/kolokviji/2008-Fert.pdf

The present and the future of spintronics

The spin Hall effect is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the spin Hall angle, the characteristic parameter of the yield of this transformation, have been recently found in noble metals doped with nonmagnetic impurities. We show that this can be explained by resonant scattering off impurity states split by the spin-orbit interaction. By using as an example copper doped with 5d impurities we describe the general conditions and provide a guide for experimentalists for obtaining the largest effects.

Spin Hall effect induced by resonant scattering on impurities in metals.

We consider long and narrow spin valves composed of a first magnetic layer with a single domain wall (DW), a normal metal spacer, and a second magnetic layer that is a planar or a perpendicular polarizer. For these structures, we study numerically DW dynamics taking into account the spin torques due to the perpendicular spin currents. We obtain high DW velocities: 5 m/s for planar polarizer and 80m/s for perpendicular polarizer for I = 0.01 mA. These values are much larger than those predicted and observed for DW motion due to the in-plane spin currents. The ratio of the magnitudes of the torques, which generate the DW motion in the respective cases, is responsible for these large differences.

Albert Fert

Papers

Left-Right Asymmetry in the Scattering of Electrons by Magnetic Impurities, and a Hall Effect

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

The present and the future of spintronics

Spin Hall effect induced by resonant scattering on impurities in metals.

High Domain Wall Velocities due to Spin Currents Perpendicular to the Plane.