From the Publisher: 
The accessible presentation of this book gives both a general view of the entire computer vision enterprise and also offers sufficient detail to be able to build useful applications. Users learn techniques that have proven to be useful by first-hand experience and a wide range of mathematical methods. A CD-ROM with every copy of the text contains source code for programming practice, color images, and illustrative movies. Comprehensive and up-to-date, this book includes essential topics that either reflect practical significance or are of theoretical importance. Topics are discussed in substantial and increasing depth. Application surveys describe numerous important application areas such as image based rendering and digital libraries. Many important algorithms broken down and illustrated in pseudo code. Appropriate for use by engineers as a comprehensive reference to the computer vision enterprise.

Computer vision : a modern approach = 计算机视觉 : 一种现代的方法

We present single-molecule, real-time sequencing data obtained from a DNA polymerase performing uninterrupted template-directed synthesis using four distinguishable fluorescently labeled deoxyribonucleoside triphosphates (dNTPs). We detected the temporal order of their enzymatic incorporation into a growing DNA strand with zero-mode waveguide nanostructure arrays, which provide optical observation volume confinement and enable parallel, simultaneous detection of thousands of single-molecule sequencing reactions. Conjugation of fluorophores to the terminal phosphate moiety of the dNTPs allows continuous observation of DNA synthesis over thousands of bases without steric hindrance. The data report directly on polymerase dynamics, revealing distinct polymerization states and pause sites corresponding to DNA secondary structure. Sequence data were aligned with the known reference sequence to assay biophysical parameters of polymerization for each template position. Consensus sequences were generated from the single-molecule reads at 15-fold coverage, showing a median accuracy of 99.3%, with no systematic error beyond fluorophore-dependent error rates.

/pdf/real-time-dna-sequencing-from-single-polymerase-molecules-3o0n2kc430.pdf

Real-Time DNA Sequencing from Single Polymerase Molecules

We present a method of recovering high dynamic range radiance maps from photographs taken with conventional imaging equipment. In our method, multiple photographs of the scene are taken with different amounts of exposure. Our algorithm uses these differently exposed photographs to recover the response function of the imaging process, up to factor of scale, using the assumption of reciprocity. With the known response function, the algorithm can fuse the multiple photographs into a single, high dynamic range radiance map whose pixel values are proportional to the true radiance values in the scene. We demonstrate our method on images acquired with both photochemical and digital imaging processes. We discuss how this work is applicable in many areas of computer graphics involving digitized photographs, including image-based modeling, image compositing, and image processing. Lastly, we demonstrate a few applications of having high dynamic range radiance maps, such as synthesizing realistic motion blur and simulating the response of the human visual system.

/pdf/recovering-high-dynamic-range-radiance-maps-from-photographs-zk2yr4fcgd.pdf

Recovering high dynamic range radiance maps from photographs

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

/pdf/an-integrated-semiconductor-device-enabling-non-optical-4stnv5p3y9.pdf

An integrated semiconductor device enabling non-optical genome sequencing

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Keywords: camera : video ; visualisation ; appareils de : mesure Reference Record created on 2005-11-18, modified on 2016-08-08

Solid-State Imaging with Charge-Coupled Devices

This paper presents a CMOS imager with a column-parallel ADC architecture based on a multiple-ramp single-slope (MRSS) ADC. Like the well-known column-level single-slope ADC, an MRSS ADC uses a very simple analog column circuit, which mainly consists of an analog comparator and some switches. A prototype imager using the MRSS ADC architecture was realized in a 0.25 CMOS process. Measurements demonstrate that the conversion speed of an MRSS ADC is 3.3 higher than a single-slope ADC while dissipating only 16% more power. Furthermore, the MRSS ADC can be easily adapted to exhibit a companding characteristic, which exploits the amplitude-dependent nature of the photon shot noise present in imager signals. Measurements show that the resulting multiple-ramp multiple-slope ADC is 25% faster than an MRSS ADC while dissipating the same amount of power.

Multiple-Ramp Column-Parallel ADC Architectures for CMOS Image Sensors

An image sensor for a video camera of 1000000 frames per second (fps) was developed. The specifications of the developed sensor are as follows: 1) frame rate: 1000000 fps; 2) pixel count: 81 120 (=312/spl times/260) pixels; 3) total number of successive frames: 103 frames; 4) gray levels: 10 b; and 5) open area of each pixel (fill factor): 580 square micrometers (13%). The overwriting function is installed for synchronization of image capturing with occurrence of the target event. Sensitivity is significantly high with the large photogate. Some innovative technologies were introduced to achieve ultrahigh performance, including slanted linear CCD in situ storage, curving design procedure, and a CCD switch with fewer metal shunting wires. They are applicable to the development of other new high-performance image sensors.

An image sensor which captures 100 consecutive frames at 1000000 frames/s

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

/pdf/cmos-image-sensors-state-of-the-art-6j7hp4d270.pdf

CMOS image sensors: State-of-the-art

In this paper, we present an extensive study of leakage current mechanisms in diodes to model the dark current of various pixel architectures for active pixel CMOS image sensors. Dedicated test structures made in 0.35-/spl mu/m CMOS have been investigated to determine the various contributions to the leakage current. Three pixel variants with different photodiodes-n/sup +//pwell, n/sup +//nwell/p-substrate and p/sup +//nwell/p-substrate-are described. We found that the main part of the total dark current comes from the depletion of the photodiode edge at the surface. Furthermore, the source of the reset transistor contributes significantly to the total leakage current of a pixel. From the investigation of reverse current-voltage (I-V) characteristics, temperature dependencies of leakage current, and device simulations we found that for a wide depletion, such as n-well/p-well, thermal Shockley-Read-Hall generation is the main leakage mechanism, while for a junction with higher dopant concentrations, such as n/sup +//p-well or p/sup +//n-well, tunneling and impact ionization are the dominant mechanisms.

/pdf/leakage-current-modeling-of-test-structures-for-2ionewoyi7.pdf

Albert J. P. Theuwissen

Papers

Solid-State Imaging with Charge-Coupled Devices

Multiple-Ramp Column-Parallel ADC Architectures for CMOS Image Sensors

An image sensor which captures 100 consecutive frames at 1000000 frames/s

CMOS image sensors: State-of-the-art

Leakage current modeling of test structures for characterization of dark current in CMOS image sensors