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Allen R. Hefner
Researcher at National Institute of Standards and Technology
Publications - 102
Citations - 3428
Allen R. Hefner is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: Silicon carbide & Power semiconductor device. The author has an hindex of 32, co-authored 102 publications receiving 3246 citations. Previous affiliations of Allen R. Hefner include Virginia Tech.
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Journal ArticleDOI
An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
TL;DR: An analytical model for the power Insulated-Gate Bipolar Transistor (IGBT) is developed in this paper, which consistently describes the IGBT steady-state currentvoltage characteristics and switching transient current and voltage waveforms for all loading conditions.
Proceedings ArticleDOI
10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications
Mrinal K. Das,Craig Capell,David Grider,Scott Leslie,John Ostop,Ravi Raju,Michael Joseph Schutten,Jeffrey Joseph Nasadoski,Allen R. Hefner +8 more
TL;DR: The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes as mentioned in this paper.
Journal ArticleDOI
Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
TL;DR: In this paper, the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power MOSFET was compared with a 400-V and 2kV SiC MOS FET, with the exception that the SiC device requires twice the gate drive voltage.
Journal ArticleDOI
SiC power diodes provide breakthrough performance for a wide range of applications
TL;DR: In this article, the electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) Diodes in the voltage range from 600 V through 5000 V.
Journal ArticleDOI
Characterization of power electronics system interconnect parasitics using time domain reflectometry
TL;DR: In this paper, a time domain reflectometry (TDR) measurement-based modeling technique is described for characterizing interconnect parasitics in switching power converters, and experiments are conducted on power components of a prototype high-power inverter, including IGBT modules, busbar and bulk capacitors.