S
Sei-Hyung Ryu
Researcher at Cree Inc.
Publications - 194
Citations - 5301
Sei-Hyung Ryu is an academic researcher from Cree Inc.. The author has contributed to research in topics: Silicon carbide & Power semiconductor device. The author has an hindex of 40, co-authored 187 publications receiving 4822 citations. Previous affiliations of Sei-Hyung Ryu include Research Triangle Park & Wayne State University.
Papers
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Journal ArticleDOI
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
TL;DR: In this article, it was shown that the recombination-induced stacking faults in high-voltage p-n diodes in SiC can increase the forward voltage drop due to reduction of minority carrier lifetime.
Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Journal ArticleDOI
Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
TL;DR: In this paper, the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power MOSFET was compared with a 400-V and 2kV SiC MOS FET, with the exception that the SiC device requires twice the gate drive voltage.
Journal ArticleDOI
SiC Power Devices for Microgrids
TL;DR: In this article, the physics and technology of high-voltage (>10 kV) 4H-SiC power devices, namely MOSFETs and insulated gate bipolar transistors, are discussed.
Journal ArticleDOI
1800 V NPN bipolar junction transistors in 4H-SiC
TL;DR: The first high voltage npn bipolar junction transistors (BJTs) in 4H-SiC have been demonstrated in this article, where the BJTs were able to block 1800 V in common emitter mode and showed a peak current gain of 20 and an on-resistance of 10.8 m/spl Omega/spl middot/cm/sup 2/ at room temperature (I/sub C/=2.7 A @ V/sub CE/= 2 V for a 1 mm/spl times/1.4 mm active area).