A
Amin Azizi
Researcher at University of California, Berkeley
Publications - 37
Citations - 1217
Amin Azizi is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Scanning transmission electron microscopy & Monolayer. The author has an hindex of 15, co-authored 35 publications receiving 878 citations. Previous affiliations of Amin Azizi include Sharif University of Technology & Lawrence Berkeley National Laboratory.
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Journal ArticleDOI
High-Performance Polymers Sandwiched with Chemical Vapor Deposited Hexagonal Boron Nitrides as Scalable High-Temperature Dielectric Materials
Amin Azizi,Matthew R. Gadinski,Qi Li,Mohammed Abu AlSaud,Jianjun Wang,Yi Wang,Bo Wang,Feihua Liu,Long Qing Chen,Nasim Alem,Qing Wang +10 more
TL;DR: This work demonstrates a general and scalable pathway to enable the high-temperature capacitive energy applications of a wide range of engineering polymers and also offers an efficient method for the synthesis and transfer of 2D nanomaterials at the scale demanded for applications.
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Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide
Amin Azizi,Xiaolong Zou,Peter Ercius,Zhuhua Zhang,Ana Laura Elías,Nestor Perea-Lopez,Greg Stone,Mauricio Terrones,Boris I. Yakobson,Nasim Alem +9 more
TL;DR: This study presents dislocation motion, glide and climb, leading to grain boundary migration in a tungsten disulphide monolayer, and demonstrates how dislocations introduce considerable strain along the grain boundaries and at the dislocation cores.
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Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides.
Amin Azizi,Sarah M. Eichfeld,Gayle Geschwind,Kehao Zhang,B. Jiang,Debangshu Mukherjee,Lorraine Hossain,Aleksander F. Piasecki,Bernd Kabius,Joshua A. Robinson,Nasim Alem +10 more
TL;DR: This study demonstrates a unique approach to create atomically thin freestanding van der Waals heterostructures-WSe2/graphene and MoS2/ graphene-as ideal model systems to investigate the nucleation and growth mechanisms in heteroststructures and reveals the significant role of defects on the heterostructure growth.
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Controlled synthesis of 2D transition metal dichalcogenides: from vertical to planar MoS2
Fu Zhang,Kasra Momeni,Kasra Momeni,Mohammed Abu AlSaud,Amin Azizi,Mel F. Hainey,Joan M. Redwing,Long Qing Chen,Nasim Alem +8 more
TL;DR: In this article, the authors combined experimental and numerical modeling studies to investigate the key growth parameters that govern the morphology of 2D materials, and showed that the transition from vertical to horizontal growth is achieved by controlling the magnitude and distribution of the precursor concentration by placing the substrate at different orientations and locations relative to the source.
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Fabrication of Subnanometer-Precision Nanopores in Hexagonal Boron Nitride
S. Matt Gilbert,S. Matt Gilbert,Gabriel Dunn,Gabriel Dunn,Amin Azizi,Amin Azizi,Thang Pham,Thang Pham,Brian Shevitski,Edgar Dimitrov,Edgar Dimitrov,Stanley Liu,Stanley Liu,Shaul Aloni,Alex Zettl,Alex Zettl +15 more
TL;DR: This work demonstrates the fabrication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of the pore shape and size, and demonstrates how the geometry of these pores can be altered beyond triangular by changing beam conditions.