A
Amit Kumar Srivastava
Researcher at Indian Institute of Technology Kanpur
Publications - 27
Citations - 506
Amit Kumar Srivastava is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Thin film & Spin coating. The author has an hindex of 12, co-authored 25 publications receiving 403 citations.
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Journal ArticleDOI
Anti-inflammatory, cyclooxygenase inhibitory and antioxidant activities of standardized extracts of Tridax procumbens L.
Sanjay M. Jachak,Raju Gautam,Chelliah Selvam,Himanshu Madhan,Amit Kumar Srivastava,Taj Usman Khan +5 more
TL;DR: The standardized EtOAc, MeOH and 70% EtOH extracts of Tridax procumbens aerial parts showed significant inhibition of rat paw edema at a medium dose of 200mg/kg and the EtOAC extract was the most active.
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Rotenoids from Boerhaavia diffusa as potential anti-inflammatory agents.
Khemraj Bairwa,Ishwari N. Singh,Somendu Kumar Roy,Jagdeep Grover,Amit Kumar Srivastava,Sanjay M. Jachak +5 more
TL;DR: In this paper, the structures of the new rotenoids were elucidated by spectroscopic data interpretation, and all the isolated rotenoid compounds were evaluated for their COX-1 and COX -2 inhibitory activities.
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Linear and nonlinear optical changes in amorphous As2Se3 thin film upon UV exposure
TL;DR: Amorphous As 2 Se 3 chalcogenide thin film was exposed to UV light (i line and g line) using mercury lamp for 30 min XRD, UV/VIS spectroscopy and thickness measurements were taken for unexposed and exposed thin film for structural and optical characterizations Linear optical constants (linear refractive index, extinction coefficient and linear optical absorption coefficient) of the film were calculated from transmission spectra using Swanepoel method Optical bandgap was determined using Tauc's relation of indirect bandgap material Dispersion of the material was described by singleoscill
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Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films
TL;DR: Variation in ZnO optical bandgap occurring with Ga doping and insertion of additional zinc species has been explained by invoking two competing phenomena, namely bandgap widening and renormalization, usually observed in semiconductors with increasing carrier concentration.
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Preparation, microstructure and optical absorption behaviour of NiO thin films.
TL;DR: Nickel oxide thin films exhibit high optical transmittance in the wave length range of 400-800 nm, sharp absorption in the interval 300-400 nm like that of semiconductor/insulator, and decrease of energy band gap with increase of annealing temperature and molarity both.