Molecular self-assembly is the spontaneous association of molecules under equilibrium conditions into stable, structurally well-defined aggregates joined by noncovalent bonds. Molecular self-assembly is ubiquitous in biological systems and underlies the formation of a wide variety of complex biological structures. Understanding self-assembly and the associated noncovalent interactions that connect complementary interacting molecular surfaces in biological aggregates is a central concern in structural biochemistry. Self-assembly is also emerging as a new strategy in chemical synthesis, with the potential of generating nonbiological structures with dimensions of 1 to 10(2) nanometers (with molecular weights of 10(4) to 10(10) daltons). Structures in the upper part of this range of sizes are presently inaccessible through chemical synthesis, and the ability to prepare them would open a route to structures comparable in size (and perhaps complementary in function) to those that can be prepared by microlithography and other techniques of microfabrication.

Molecular self-assembly and nanochemistry: A chemical strategy for the synthesis of nanostructures

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Elements Of X Ray Diffraction

저작근 근전도에 관한 정상교합자와 ii급 부정교합자의 비교 연구

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2∕Vs, a gate voltage swing of 1.39V∕decade and an on/off ratio of 3×105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

Recent advances in ZnO transparent thin film transistors

Multicomponent amorphous oxides are starting to emerge as a class of appealing semiconductor materials for application in transparent electronics. In this work, a high performance bottom-gate n-type transparent thin-film transistors are reported, being the discussion primarily focused on the influence of the indium zinc oxide active layer thickness on the properties of the devices. For this purpose, transparent transistors with active layer thicknesses ranging from 15 nm to 60 nm were produced at room temperature using rf magnetron sputtering. Optical transmittance data in the visible range reveals average transmittance higher than 80%, including the glass substrate. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On–off ratios above 107 are achieved, but this value tends to be lower for devices with thicker semiconductor films, as a result of the decrease in the resistance of the channel region with increasing thickness. Channel mobilities are also quite respectable, with some devices presenting values around 40 cm2/V s, even without any annealing or other post-deposition improvement processes. Concerning the evolution of threshold voltage with the thickness, this work shows that it increases from about 3 V in thicker films up to about 10 V in the thinnest ones. The interesting electrical properties obtained and the versatility arising from the fact that it is possible to modify them changing only the thickness of the semiconductor makes this new transparent transistors quite promising for future transparent ICs.

Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

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Ana Pimentel

Papers

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature

Recent advances in ZnO transparent thin film transistors

Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

Metal oxide nanostructures for sensor applications