R
Rita Branquinho
Researcher at Universidade Nova de Lisboa
Publications - 49
Citations - 1700
Rita Branquinho is an academic researcher from Universidade Nova de Lisboa. The author has contributed to research in topics: Oxide & Thin film. The author has an hindex of 17, co-authored 42 publications receiving 1071 citations. Previous affiliations of Rita Branquinho include Instituto Superior Técnico.
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Journal ArticleDOI
The 2016 oxide electronic materials and oxide interfaces roadmap
Michael Lorenz,M. S. Ramachandra Rao,Thirumalai Venkatesan,Elvira Fortunato,Pedro Barquinha,Rita Branquinho,Daniela Salgueiro,Rodrigo Martins,Emanuel Carlos,Ao Liu,Fukai Shan,Marius Grundmann,Hans Boschker,Joynarayan Mukherjee,M. Priyadarshini,Nandita DasGupta,D. J. Rogers,Ferechteh H. Teherani,E. V. Sandana,Philippe Bove,Kevin J. Rietwyk,Arie Zaban,A. Veziridis,Anke Weidenkaff,Miryala Muralidhar,Masato Murakami,Stefan Abel,Jean Fompeyrine,Jesús Zúñiga-Pérez,Ramamoorthy Ramesh,Nicola A. Spaldin,S. Ostanin,Vitaliy B. Borisov,Ingrid Mertig,Vera Lazenka,Gopalan Srinivasan,Wilfrid Prellier,Masaki Uchida,Masashi Kawasaki,Rossitza Pentcheva,Philipp Gegenwart,F. Miletto Granozio,Josep Fontcuberta,Nini Pryds +43 more
TL;DR: In this paper, the authors present a roadmap for oxide-based electronics with a focus on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide based devices.
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Metal oxide nanostructures for sensor applications
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Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.
Rita Branquinho,Daniela Salgueiro,Lídia Santos,Pedro Barquinha,Luís Pereira,Rodrigo Martins,Elvira Fortunato +6 more
TL;DR: This work explores the solution combustion synthesis and reports on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent.
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Solution Combustion Synthesis: Towards a Sustainable Approach for Metal Oxides.
TL;DR: Special attention is given to the application of SCS to form metal oxide thin films at low temperature and their application in thin film transistors (TFTs), and how these affect the overall materials properties from nanostructures to thin films.
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Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.
TL;DR: Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures.