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Andrej Yu. Kuznetsov
Researcher at University of Oslo
Publications - 127
Citations - 2622
Andrej Yu. Kuznetsov is an academic researcher from University of Oslo. The author has contributed to research in topics: Thin film & Chemistry. The author has an hindex of 23, co-authored 113 publications receiving 2195 citations.
Papers
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Journal ArticleDOI
Correlations of thermal properties with grain structure, morphology, and defect balance in nanoscale polycrystalline ZnO films
Anna Kaźmierczak-Bałata,Lucyna Grządziel,Marek Guziewicz,Vishnukanthan Venkatachalapathy,Vishnukanthan Venkatachalapathy,Andrej Yu. Kuznetsov,Maciej Krzywiecki +6 more
TL;DR: In this paper, two sets of ZnO thin films grown by atomic layer deposition method were investigated to analyse the correlation between morphology, chemical defects and thermal properties, showing that the increase in thickness for the samples grown at 200°C was accompanied with a continuous shift to Zn-rich conditions and corresponding increase in the thermal conductivity.
Book ChapterDOI
Bulk Growth and Impurities
Lasse Vines,Andrej Yu. Kuznetsov +1 more
TL;DR: In this article, the authors have reviewed selected aspects of bulk single crystal growth of ZnO, including growth from the melt, hydrothermal, and chemical vapor transport methods.
Journal ArticleDOI
Optical and morphological features of bulk and homoepitaxial ZnO
Rositsa Yakimova,Gholamreza Yazdi,Nguyen Tien Son,Ivan Gueorguiev Ivanov,Mikael Syväjärvi,S. Sun,G. Tompa,Andrej Yu. Kuznetsov,Bengt Gunnar Svensson +8 more
TL;DR: In this paper, the authors investigated the free exciton nophonon lines and their relationship with the crystal-field split-off counterpart of the valence band in ZnO substrate crystals.
Journal ArticleDOI
Tunneling in ZnO/ZnCdO quantum wells towards next generation photovoltaic cells
TL;DR: In this article, structural and photoluminescence properties of ZnO-based multiple quantum wells (MQWs) by metal organic vapor phase epitaxy were investigated and the observed spectral and carrier lifetime variations were discussed in terms of quantum confinement and internal electric field modulation.
Journal ArticleDOI
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
Snorre Braathen Kjeldby,Alexander Azarov,Phuc Nguyen,Vishnukanthan Venkatachalapathy,Romana Mikšová,Anna Macková,Andrej Yu. Kuznetsov,Øystein Prytz,Lasse Vines +8 more
TL;DR: In this paper , defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga2O3) wafers, having different surface orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM).