Angelo Visconti

TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.

TL;DR: In this article, a probabilistic superposition of elementary Markov processes describing the trapping/detrapping events taking place in the cell tunnel oxide was proposed to explain the main features of the random telegraph noise threshold-voltage instability.

TL;DR: In this article, a semi-empirical model based on the idea that a conductive path assimilable to a resistance connects the floating gate to the substrate during the time (10/sup -14/ s) needed for electrons to escape the tunnel oxide was proposed.

TL;DR: In this paper, a detailed analytical modeling for the constant-current Fowler-Nordheim program operation of NAND flash memories is presented, able to describe both the average transient of the cell threshold voltage and its statistical spread due to the granular nature of the electron current flowing through the cell tunnel oxide.

TL;DR: This paper presents a 3-V-only 64-Mb 4-level-cell (2-b/cell) NOR-type channel-hot-electron (CHE) programmed flash memory fabricated in 0.18-/spl mu/m shallow-trench isolation CMOS technology, thereby increasing device reliability while still providing layout area optimization.