Showing papers by "Anthony Ghiotto published in 2019"

Partially Air-Filled Substrate Integrated Waveguide Filters With Full Control of Transmission Zeros

Abstract: This paper presents the investigation and testing of novel substrate integrated waveguide (SIW) bandpass filters, based on air-filled cavity resonators. Removing the lateral parts of the dielectric substrate in SIW rectangular cavities enables the use of the TM120 and TM210 modes to implement a dual-mode resonator. In addition, the fundamental TM110cavity mode is adopted to implement a transmission zero. This paper demonstrates the complete control of the central operation frequency, the pass bandwidth, the spurious-free bandwidth region, and the location of the transmission zeros. After a comprehensive theoretical investigation, design rules are derived and applied to the implementation of a variety of dual-mode cavities, which have been manufactured and tested. Moreover, these basic structures have been used as building blocks to design higher order filters: simulations and measurements of four-pole filters are reported for validation.

Compact Quasi-Elliptic and Highly Selective AFSIW Filter with Multilayer Cross-Coupling

Abstract: A quasi-elliptic filter topology based on high performance air-filled substrate integrated waveguide (AFSIW) technological platform is presented. This new topology takes advantage of the AFSIW multilayer property to implement a cross coupling between non-adjacent resonators while maintaining the self-packaging characteristics of AFSIW filters. By etching inductive windows on the top copper layer of the AFSIW bottom substrate, a second signal path is created using an SIW transmission line. Thus, the primary path of the signal is implemented using a lossless medium (air in the milled inner substrate) and the second path is implemented in the bottom substrate. The multipath coupling diagram is constructed, considering a fourth order filter. Then, the relative phase shifts of the primary and secondary path are determined to obtain transmission zeros. For experimental validation, a quasi-elliptic fourth order filter demonstrator operating at 21 GHz with a 350 MHz (1.66 %) bandwidth is designed, fabricated and measured. Furthermore, a study shows its high robustness against printed circuit board (PCB) process manufacturing, considering standard tolerances. In and out band measured results are in a good agreement with simulated results. The fabricated filter achieves an insertion loss as low as 0.7 dB with an excellent unloaded Q-factor of 1478.

Configurable Perforated Air-Filled Substrate Integrated Waveguide (AFSIW) For Generic High-Performance Systems on Substrate

Abstract: In this article, the patent pending configurable perforated air-filled substrate integrated waveguide (PAFSIW) is presented. First, a theoretical and experimental study of the proposed PAFSIW topology is introduced. Specifically, it is demonstrated that a low-cost Hi- Tg FR4 PAFSIW transmission line can handle over 190 W (up to 1340 W, determined from extrapolation of the experimental results) of continuous wave (CW) power at 20 GHz with an enhanced thermal dissipation compared with its AFISW counterpart. Then, configurable phase shifters, resonators, and filters based on the PAFSIW transmission line sections are introduced. Those components are fabricated using the conventional printed circuit board (PCB) and the through-hole mounting (THM) process to demonstrate the PAFSIW versatility and fabrication-tolerance robustness. The proposed PAFSIW extends the capabilities of the high-performance AFSIW technological platform as it provides genericity, manufacturing process robustness, and an alternative to improve thermal dissipation. The authors expect its implementation in highly configurable microwave- and millimeter-wave circuits for future generic systems on substrate.

A 90° Self-Compensating Slab Air-Filled Substrate Integrated Waveguide Phase Shifter

Abstract: This paper presents a 90° self-compensating phase shifter based on a slab air-filled substrate integrated waveguide platform in Ka-band. A shorter phase shifter is obtained due to its operation mechanism. The measurement shows a relative phase shift of 88 ± 7.8°, or around 8.9% for phase error, and an amplitude imbalance of 0.06 ± 0.14 dB over Ka-band. A theoretical study is presented together with simulation to understand the operation principle of this phase shifter. Simulation and measurement results are compared and discussed.

Feasibility Demonstration of a Ka-Band Linearized Channel Amplifier in Silicon Technology for Space Applications

Abstract: This paper presents the design, implementation and characterizations of a Ka-Band [17.3 - 20.2 GHz] linearized channel amplifier (LCAMP) for space Travelling Wave Tube Amplifier (TWTA). The 130nm SiGe BiCMOS technology from ST Microelectronics (BiCMOS9MW) has been used. It validates the feasibility of a LCAMP and all its constitutive building blocks in silicon technologies at such high frequencies with high linearity requirements, hence allowing to consider a drastic mass, footprint and cost reduction of such equipment.

Assembly for propagating waves of frequencies comprised between 1 GHz and 10 THz

Abstract: The present invention relates to an assembly for propagating waves of frequencies comprised between 1 GHz and 10 THz. According to the invention, this assembly comprises: (a) a waveguide (11, 21) forguiding said waves, said waveguide (11, 21) being made from a plastic, one portion of said waves propagating in the interior of this waveguide (11, 21) and another portion of said waves propagating onthe exterior of this waveguide (11, 21); and (b) a protective jacket (12) that encircles said wave guide (11, 21) while defining one or more spaces between said waveguide (11, 21) and said jacket, wherein said waves propagating on the exterior of said waveguide (11, 21) are contained, said protective jacket (12) thus forming a barrier protecting the latter from external interference.

Quasi Inverse Class-F X-Band Highly Efficient Power Amplifier with 51.8% Peak PAE in SiGe

Abstract: This paper presents a compact quasi inverse class-F highly efficient power amplifier (PA) based on the 130 nm SiGe technology. The purpose is to drive high output power with high power added efficiency (PAE) over the X-band, while ensuring a good amplitude and phase linearity. To do that, a differential cascode topology with low base impedance has been used. Measured results exhibit 51.8% peak PAE with 25.7 dBm output power at 9 GHz. To our knowledge, this PA demonstrates the highest efficiency with linear behaviour among Si-based X-band power amplifiers found in literature.

A High-Speed Millimeter-Wave QPSK Transmitter in 28nm CMOS FD-SOI for Polymer Microwave Fibers Applications

Abstract: Benefiting from considerable progress in the design of low-power, low cost and high-speed millimeter-wave circuits, Polymer Microwave Fibers (PMF) are gaining interest in the context of serial links. In this work, an innovative dual-band Quadrature Phase Shift Keying (QPSK) architecture, which is based on integrated wideband and low loss differential hybrid couplers, is proposed to increase data rate capability while still preserving low power and moderate range potentials. A circuit demonstrator in 28 nm CMOS FD-SOI is presented to validate the concepts. It achieves fifth harmonic locking on a wide continuous locking range and realizes 9 Gb/s data rate in the E-band.

AFSIW Termination with Full- and Partial-Height Absorbing Material Loading

Abstract: In this paper, an air-filled substrate integrated waveguide (AFSIW) termination is introduced. To the authors' knowledge, it is the first time such essential component found in most microwave and millimetre-wave systems is reported based on the AFSIW technological platform. First, a full-height absorbing material loaded AFSIW termination is studied, with a design based on the theory of multi-section transformer. Second, an improved partial-height absorbing material loaded AFSIW termination is introduced to reduce the termination size as well as to improve the distribution of energy dissipated in the absorbing material. This second design is based on the effective permittivity calculation of a multilayer dielectric model inspired by the Wienner analytical model. For demonstration purposes, an optimized partial-height absorbing material loaded AFSIW termination, operating in the downlink Ka-band satellite communication frequency band (17.7 to 21.3 GHz), was designed and fabricated based on a shorted AFSIW transmission line loaded with a laser cut absorbing material sheet to fabricate the desired absorber geometric shape. The measured results show a reflection coefficient better than -20 dB over the entire frequency range of interest with a termination total length as small as 15 mm.

Innovative Filters in Partially Air-Filled in Substrate Integrated Waveguide Technology

Abstract: This paper presents a novel class of substrate integrated waveguide filters, based on partially air-filled rectangular cavities. These partially-air filled cavity implements a doublet, that exhibits a frequency response with two poles and two transmission zeros. Two different topologies are proposed: in the first one, the partially air-filled region is located in the center of the rectangular cavity and this allows to locate two zeros below the pass band; in the second topology, two partially air-filled regions are located at the sides of the rectangular cavity and this allows to locate arbitrarily the two zeros, either both below, or both above, or one below and one above the pass band. Prototypes of the two topologies have been designed and experimentally verified.

Large-Signal Modeling and Experimental Design Automation of Self-Isolated Harmonic Oscillator for Pulling Effect Reduction

Abstract: A class of self-isolated harmonic oscillator (SIHO) with a feedback-loop structure is able to significantly reduce the pulling effect without involving extra circuit complexity such as a buffer amplifier. In the first part of this paper, the operation principle of the SIHO is theoretically studied through equivalent circuit models and X-parameter techniques. Closed-form expressions are derived to represent the respective linear and nonlinear equivalent impedances of SIHO subnetworks perturbed by varied load and injected signals. A conventional feedback-loop oscillator structure delivering the fundamental tone is used for comparative study. Such a modeling technique reveals the physical principle and behavior parameters that have an impact on the pulling effect. The experimental verification of the SIHO operation principle and modeling is presented as the second part of this paper. To this end, a harmonic measurement and design system is proposed and implemented for the design of an exemplary SIHO, which delivers a 4-GHz signal with 16.6-dBm power, 28% dc-RF efficiency, and −136.5-dBc/Hz phase noise at 1-MHz offset. The design process does not rely on circuit simulation software packages or a prior knowledge of the large-signal model of transistors, thus demonstrating the concept of a model-free nonlinear circuit design automation based on the experimental optimization. The SIHO circuit model is validated with the measured X-parameters of its nonlinear subnetwork.

Fast Design Methodology of Stacked Transformers and Hybrid Couplers in SiGe Technology

Abstract: This paper presents a new fast design methodology for stacked impedance transformers based on SiGe technology. The purpose is to express the transformer impedance values as a function of the transformer geometric parameters. This methodology will be expanded to 90° compact hybrid couplers design. This concept will be validated by electromagnetic simulations up to 80 GHz. Results from this methodology will be compared to those obtained with measured transformer based on BiCMOS9MW 130nm from STMicroElectronics.

Recent Advances in Filter Design Using The AFSIW Technological Platform

Abstract: In this paper, the air-filled substrate integrated waveguide (AFSIW) technology for high performance filtering applications is presented. This technology offers an alternative technological platform for future communication systems. The AFSIW technology inherits the high degree of freedom of the PCB process as well as the high electrical performances of conventional metallic waveguide technologies. Authors expect its implementation in high performance microwave and millimeter-wave components for future systems and circuits on substrate.

Ensemble guide d'onde et procede d'assemblage associe

Abstract: Cet ensemble guide d'onde comprend un composant de reception (14) et un composant actif (12) electronique. Le composant de reception (14) comporte un guide d'onde (16), le guide d'onde (16) definissant une zone de propagation (40) s'etendant le long d'un axe de propagation, le guide d'onde (16) comprenant successivement, selon une direction verticale orthogonale a l'axe de propagation, une couche superieure (18), une couche intermediaire superieure, une couche centrale (22), une couche intermediaire inferieure (24), et une couche inferieure (26), le composant de reception (14) delimitant une cavite de reception (28) du composant actif (12), le composant actif (12) etant recu dans la cavite (28), la cavite (28) etant amenagee a travers la couche superieure (18) et la couche intermediaire superieure, et s'etendant selon la direction verticale depuis la couche centrale (22) jusqu'a une surface superieure (42A) de la couche superieure (18).

High-Reliability Active Integrated Power Limiter with Sharp Compression Profile in Ka-Band in 130 nm SiGe Technology

Abstract: A power limiter with high input power handling (24 dB over the input compression point) and sharp compression profile (less than 1.5 dB between the output 1-dB compression point and the output saturated power) in Ka-band (17.3 GHz; 20.2 GHz) is presented in this paper. Moreover, the circuit shows a low phase distortion (<3°) which make it suitable for use in an analog pre-processing linearizing system. This performances are obtained thanks to a novel architecture based on a power amplifier topology. This work presents the architecture along with the design methodology. Reliability is studied at high input power condition using the safe operation area from the technology provider. Then, a prototype is designed on 130 nm BiCMOS technology from STMicroelectronics, measured and compared to the simulation and the state of art.