Los Angeles Harbor College

About: Los Angeles Harbor College is a education organization based out in Los Angeles, California, United States. It is known for research contribution in the topics: MOSFET & Silicon on insulator. The organization has 447 authors who have published 842 publications receiving 9170 citations. The organization is also known as: Harbor College.

A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

Abstract: We present the first experimental study of a Gate-All-Around (GAA) SONOS memory architecture with 4-level crystalline nanowire channels (down to 6nm-diameter). The technology is also extended to an independent double gate memory architecture, called φ-Flash. The experimental results with 6nm nanowires show high programming windows (up to 7.4V), making the structure compatible with multilevel operation. Excellent retention even after 104 cycles is achieved. The independent double gate option has otherwise been successfully integrated with 4-level stacked nanowires for multibit applications. The φ-Flash exhibits up to 1.8V ΔV Th between its two gates, demonstrating multibits operation. The basic process to fully disconnect the different nanowires in view of a full 3D integration of a memory array is discussed.

European roadmap on superconductive electronics – status and perspectives☆

Abstract: For four decades semiconductor electronics has followed Moore's law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 mu W per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Phi(0). The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit 'Volt' is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals. SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by 'transition-edge' bolo-meters, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: - Ultra-sensitive sensing and imaging. - Quantum measurement instrumentation. - Advanced analogue-to-digital converters. - Superconductive electronics technology.

Performance Optimization of Vertical Nanowire-based Piezoelectric Nanogenerators

Abstract: The integrated nanogenerator (NG) based on vertical nanowire (NW) arrays is one of the dominant designs developed to harvest mechanical energy using piezoelectric nanostructures. Finite element method (FEM) simulations of such a NG are developed using ZnO NWs in compression mode to evaluate its performances in term of piezoelectric potential generated, capacitance, induced mechanical energy, output electrical energy, and efficiency. This evaluation is essential to correctly understand NG operation. Three main issues are highlighted. The mechanical and electrical structures of the NG as an integrated system are optimized, and strategies for concentrating the mechanical strain field in the NWs and increasing the force sensitivity are developed. In addition, the influence of NWs length and diameter on NG performances is investigated. The optimization results in a piezoelectric nano composite material where global performances are improved by mean of long and thin NWs.

15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

Abstract: For the first time, we report a 3D stacked sub-15 nm diameter NanoWire FinFET-like CMOS technology (3D-NWFET) with a new optional independent gate nanowire structure named PhiFET. Extremely high driving currents for 3D-NWFET (6.5 mA/mum for NMOS and 3.3 mA/mum for PMOS) are demonstrated thanks to the 3D configuration using a high-k/metal gate stack. Co-processed reference FinFETs with fin widths down to 6 nm are achieved with record aspect ratios of 23. We show experimentally that the 3D-NWFET, compared to a co-processed FinFET, relaxes by a factor of 2.5 the channel width requirement for a targeted DIBL and improves transport properties. PhiFET exhibits significant performance boosts compared to Independent-Gate FinFET (IG-FinFET): a 2-decade smaller IOFF current and a lower subthreshold slope (82 mV/dec. instead of 95 mV/dec.). This highlights the better scalability of 3D-NWFET and PhiFET compared to FinFET and IG-FinFET, respectively.

High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters

Abstract: This paper presents optimized very high performance CMOS slow-wave shielded CPW transmission lines (S-CPW TLines). They are used to realize a 60-GHz bandpass filter, with T-junctions and open stubs. Owing to a strong slow-wave effect, the longitudinal length of the S-CPW is reduced by a factor up to 2.6 compared to a classical microstrip topology in the same technology. Moreover, the quality factor of the realized S-CPWs reaches 43 at 60 GHz, which is about two times higher than the microstrip one and corresponds to the state of the art concerning S-CPW TLines with moderate width. For a proof of concept of complex passive device realization, two millimeter-wave filters working at 60 GHz based on dual-behavior-resonator filters have been designed with these S-CPWs and measured up to 110 GHz. The measured insertion loss for the first-order (respectively, second-order) filter is -2.6 dB (respectively, -4.1 dB). The comparison with a classical microstrip topology and the state-of-the-art CMOS filter results highlights the very good performance of the realized filters in terms of unloaded quality factor. It also shows the potential of S-CPW TLines for the design of high-performance complex CMOS passive devices.