A
Aris Christou
Researcher at University of Maryland, College Park
Publications - 88
Citations - 490
Aris Christou is an academic researcher from University of Maryland, College Park. The author has contributed to research in topics: High-electron-mobility transistor & Reliability (semiconductor). The author has an hindex of 10, co-authored 88 publications receiving 436 citations.
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Electromigration and electronic device degradation
TL;DR: Christou et al. as mentioned in this paper studied the effect of metal-semiconductor properties on the stability of multilayer metal-Semiconductor systems on GaAs and showed that the stability and reliability of these systems depend on the temperature of the GaAs.
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Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
David I. Shahin,Marko J. Tadjer,Virginia D. Wheeler,Andrew D. Koehler,Travis J. Anderson,Charles R. EddyJr.,Aris Christou +6 more
TL;DR: In this article, the electrical properties of HfO2 dielectrics grown by thermal atomic layer deposition at 175°C on n-type β-Ga2O3 has been studied through capacitance and current-voltage measurements on metal-oxide-semiconductor capacitors.
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Ultraviolet detector based on graphene/SiC heterojunction
Travis J. Anderson,Karl D. Hobart,Jordan D. Greenlee,David I. Shahin,Andrew D. Koehler,Marko J. Tadjer,Eugene A. Imhoff,Rachael L. Myers-Ward,Aris Christou,Francis J. Kub +9 more
TL;DR: In this article, the authors presented a detector based on an epitaxial graphene/SiC heterojunction, exploiting the 2D nature of graphene to minimize absorption losses for high-efficiency sensing.
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Prognostics of IGBT modules based on the approach of particle filtering
Yizhou Lu,Aris Christou +1 more
TL;DR: In this article, a prognostic model combining model-based and data-driven techniques was developed and validated for dynamic life prediction of insulated gate bipolar transistor (IGBT) modules under power cycling conditions.
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Calculations of optical properties for quaternary III-V semiconductor alloys in the transparent region and above (0.2-4.0 eV)
M. Linnik,Aris Christou +1 more
TL;DR: In this paper, the spectral behavior of the refractive indices of the binary, ternary and quaternary III-V semiconductor alloys in the energy range from 0.2 to 4 eV, including the transparent region, is presented.