Journal ArticleDOI
Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
David I. Shahin,Marko J. Tadjer,Virginia D. Wheeler,Andrew D. Koehler,Travis J. Anderson,Charles R. EddyJr.,Aris Christou +6 more
TLDR
In this article, the electrical properties of HfO2 dielectrics grown by thermal atomic layer deposition at 175°C on n-type β-Ga2O3 has been studied through capacitance and current-voltage measurements on metal-oxide-semiconductor capacitors.Abstract:
The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2¯01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k∼14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to −5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm−2·eV−1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5...read more
Citations
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Journal ArticleDOI
Progress of Ultra-Wide Bandgap Ga 2 O 3 Semiconductor Materials in Power MOSFETs
Zhang Hongpeng,Lei Yuan,Xiaoyan Tang,Hu Jichao,Jianwu Sun,Yimen Zhang,Yuming Zhang,Renxu Jia +7 more
TL;DR: In this article, the authors introduce the basic material properties of the β-phase of Ga and review the recent progress and advances of β-Ga-phase based metal-oxide-semiconductor field effect transistors (MOSFETs).
Journal ArticleDOI
Flexible quintuple cation perovskite solar cells with high efficiency
TL;DR: In this paper, the power conversion efficiency (PCE) of flexible perovskite solar cells (PSCs) was improved by adding Rubidium (Rb) and potassium (K) cations.
Journal ArticleDOI
Review of gallium oxide based field-effect transistors and Schottky barrier diodes
Journal ArticleDOI
Lateral β-Ga2O3 field effect transistors
Kelson D. Chabak,Kevin D. Leedy,Andrew J. Green,Shin Mou,Adam T. Neal,Thaddeus J. Asel,Eric R. Heller,Nolan S. Hendricks,Kyle J. Liddy,Antonio Crespo,Nicholas C. Miller,Miles Lindquist,Neil Moser,Robert C. Fitch,Dennis E. Walker,Donald L. Dorsey,Gregg H. Jessen +16 more
TL;DR: In this article, a review of BGO epitaxial materials and lateral field effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.
Journal ArticleDOI
Dual-Band, High-Performance Phototransistors from Hybrid Perovskite and Organic Crystal Array for Secure Communication Applications
Xiuzhen Xu,Wei Deng,Xiujuan Zhang,Liming Huang,Wei Wang,Ruofei Jia,Di Wu,Xiaohong Zhang,Jiansheng Jie,Shuit-Tong Lee +9 more
TL;DR: Integrated phototransistor circuitries from the hybrid CH3NH3PbI3 NPs/C8-BTBT single-crystal array show applications for high-security communication and represents the best performance for solution-processing, broadband photodetectors.
References
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Journal ArticleDOI
Fowler‐Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger,E. H. Snow +1 more
TL;DR: In this article, the relative effective mass in the forbidden energy gap was found to be about 0.4, which is lower by a factor of five to ten than the expected values, probably due to trapping effects.
Journal ArticleDOI
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Journal ArticleDOI
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
Andrew J. Green,Kelson D. Chabak,Eric R. Heller,Robert C. Fitch,M. Baldini,Andreas Fiedler,Klaus Irmscher,Günter Wagner,Zbigniew Galazka,Stephen E. Tetlak,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +12 more
TL;DR: In this article, a Sn-doped (100) $\beta $ -Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-Doped semi-insulating (100, β)-Ga 2O3 substrate.
Journal ArticleDOI
Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V
TL;DR: In this paper, depletion mode field-plated Ga2O3 metal-oxide-semiconductor field effect transistors were demonstrated for the first time, and the transistors exhibited an off-state breakdown voltage of 755 V, a high drain current on/off ratio of over $10^{9}$, and stable high temperature operation against 300°C thermal stress.
Journal Article
Field-Plated Ga 2 O 3 MOSFETs With a Breakdown Voltage of Over 750 V
TL;DR: In this article, depletion mode field-plated Ga2O3 metal-oxide-semiconductor field effect transistors were demonstrated for the first time, and the transistors exhibited an off-state breakdown voltage of 755 V, a high drain current on/off ratio of over $10^{9}$, and stable high temperature operation against 300°C thermal stress.