T
Travis J. Anderson
Researcher at United States Naval Research Laboratory
Publications - 198
Citations - 3968
Travis J. Anderson is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Diamond. The author has an hindex of 29, co-authored 184 publications receiving 3295 citations. Previous affiliations of Travis J. Anderson include University of Florida & United States Department of the Navy.
Papers
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Journal ArticleDOI
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Joshua D. Caldwell,Travis J. Anderson,James C. Culbertson,Glenn G. Jernigan,Karl D. Hobart,Fritz J. Kub,Marko J. Tadjer,Joseph L. Tedesco,Jennifer K. Hite,Michael A. Mastro,Rachael L. Myers-Ward,Charles R. Eddy,Paul M. Campbell,D. Kurt Gaskill +13 more
TL;DR: The dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape is demonstrated to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport.
Journal ArticleDOI
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates.
Joshua D. Caldwell,Travis J. Anderson,James C. Culbertson,Glenn G. Jernigan,Karl D. Hobart,Fritz J. Kub,Marko J. Tadjer,Joseph L. Tedesco,Jennifer K. Hite,Michael A. Mastro,Rachael L. Myers-Ward,Charles R. Eddy,Paul M. Campbell,D. K. Gaskill +13 more
TL;DR: In this article, the authors demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape.
Patent
Film on Graphene on a Substrate and Method and Devices Therefor
TL;DR: In this paper, a structure consisting of a semiconductor material film, a substrate, and a graphene material layer consisting of one or more sheets of graphene situated between the substrate and the substrate is provided.
Journal ArticleDOI
Quantifying pulsed laser induced damage to graphene
Marc Currie,Joshua D. Caldwell,Francisco J. Bezares,Jeremy T. Robinson,Travis J. Anderson,Hayden Chun,Marko J. Tadjer +6 more
TL;DR: In this paper, femtosecond laser pulses induced localized damage in single-layer graphene on sapphire, and the resulting size of the damaged area has a linear correlation with the optical fluence.
Journal ArticleDOI
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang,Zhihong Liu,Marko J. Tadjer,Min Sun,Daniel Piedra,Christopher Hatem,Travis J. Anderson,Lunet E. Luna,Anindya Nath,Andrew D. Koehler,Hironori Okumura,Jie Hu,Xu Zhang,Xiang Gao,Boris N. Feigelson,Karl D. Hobart,Tomas Palacios +16 more
TL;DR: In this article, the vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques were shown to achieve specific differential ON-resistances of 1.5-2.5 cm2 and 7-9 cm2, respectively.