Journal ArticleDOI
Calculations of optical properties for quaternary III-V semiconductor alloys in the transparent region and above (0.2-4.0 eV)
M. Linnik,Aris Christou +1 more
TLDR
In this paper, the spectral behavior of the refractive indices of the binary, ternary and quaternary III-V semiconductor alloys in the energy range from 0.2 to 4 eV, including the transparent region, is presented.Abstract:
The modeling of the spectral behavior of the refractive indices of the binary, ternary and quaternary III–V semiconductor alloys in the energy range from 0.2 to 4 eV, including the transparent region, is presented. The extended model of interband transition contributions incorporates not only the fundamental absorption edge contribution to the dielectric function, but also contributions from higher energy and indirect transitions. It is demonstrated that indirect energy transitions must be included in the calculations of the complex dielectric function of the material in the transparent region. Indirect transitions from different critical points in the Brillouin zone are treated separately. The comparison between the theoretical refractive indices and the experimental data for AlGaAsSb, AlGaInAs, AlGaInP, GaInAsSb, and GaInPAs alloys is presented. These calculations have been applied to the design of Bragg mirrors with the highest refractive index contrast for heterostructure lasers.read more
Citations
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Journal ArticleDOI
Calculations of the temperature and alloy composition effects on the optical properties of AlxGa1−xAsySb1−y and GaxIn1−xAsySb1−y in the spectral range 0.5–6 eV
TL;DR: In this article, a detailed analysis on the temperature and alloy composition dependence of the optical properties of III-V alloys AlxGa1−xAsySb1−y and GaxIn 1−xAysSb 1−y in the energy range 0.5-6 eV is presented.
Journal ArticleDOI
First-principles study of the ternary semiconductor alloys (Ga,Al)(As,Sb)
F. El Haj Hassan,F. El Haj Hassan,A. Breidi,A. Breidi,S. Ghemid,Bouhalouane Amrani,H. Meradji,Olivier Pagès +7 more
TL;DR: In this paper, Wu et al. investigated the effect of composition on lattice constant, bulk modulus, ionicity, band gap, effective mass and refractive index for ternary alloys.
Journal ArticleDOI
Solution phase synthesis of indium gallium phosphide alloy nanowires.
TL;DR: This work presents a scalable, low-temperature synthesis for indium gallium phosphide (In(x)Ga(1-x)P) alloy nanowires, whose indium/gallium ratio, and consequently, physical and electronic structure, can be tuned across the entire x = 0 to x = 1 composition range.
Journal ArticleDOI
Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure
TL;DR: In this paper, the generalized gradient approximation (GGA) for the exchange and correlation potential is applied for the optical properties of the zinc-blende structure (ZB), and the results of the structural properties calculations are in agreement with those of ab initio and experimental data.
Journal ArticleDOI
First-principles calculations to investigate optical properties of ByAlxIn1−x−yN alloys for optoelectronic devices
TL;DR: In this paper, the optical properties of B y Al x In 1− x − y N systems (with x ǫ = 0.062, 0.125, and 0.187) have been performed.
References
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Book
Handbook of Optical Constants of Solids
TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Journal ArticleDOI
Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials
S. H. Wemple,M. DiDomenico +1 more
TL;DR: In this article, a single effectiveoscillator fit was used to analyze refractive-index dispersion data below the interband absorption edge in more than 100 widely different solids and liquids.
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Semiconductors - Basic Data
TL;DR: In this article, the authors present a survey of the properties of the IVth group and IV-IV compounds, including binary compounds, ternary and quasi-binary compounds.
Journal ArticleDOI
The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling
TL;DR: In this article, the authors derived the refractive indices of AlxGa1−xAs epitaxial layers from the modal propagation constants in the range of 730 nm <λ<830 nm with an estimated uncertainty of Δn=5×10−4.
Journal ArticleDOI
Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb.
TL;DR: A new method is described for calculation of the real and imaginary parts of the dielectric function of semiconductors at energies below and above the lowest band gaps, in which the model is based on the Kramers-Kronig transformation and strongly connected with the electronic energy-band structures of the medium.
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