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Electromigration and electronic device degradation
TLDR
Christou et al. as mentioned in this paper studied the effect of metal-semiconductor properties on the stability of multilayer metal-Semiconductor systems on GaAs and showed that the stability and reliability of these systems depend on the temperature of the GaAs.Abstract:
Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (A. Christou). Simulation and Computer Models for Electromigration (P. Tang). Temperature Dependencies on Electromigration (M. Pecht & P. Lall). Electromigration and Related Failure Mechanisms in VLSI Metallizations (A. Christou & M. Peckerar). Metallic Electromigration Phenomena (S. Krumbein). Theoretical and Experimental Study of Electromigration (J. Zhao). GaAs on Silicon Performance and Reliability (P. Panayotatos, et al.). Electromigration and Stability of Multilayer Metal--Semiconductor Systems on GaAs (A. Christou). Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (A. Christou). Reliable Metallization for VLSI (M. Peckerar). Index.read more
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Controlled fabrication of nanogaps in ambient environment for molecular electronics
Douglas R. Strachan,Deirdre E. Smith,Danvers E. Johnston,Tae Hong Park,Michael J. Therien,Dawn A. Bonnell,Alan T. Johnson +6 more
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