A
Atsushi Murakoshi
Researcher at Toshiba
Publications - 72
Citations - 1257
Atsushi Murakoshi is an academic researcher from Toshiba. The author has contributed to research in topics: Gate oxide & Ion implantation. The author has an hindex of 18, co-authored 72 publications receiving 1248 citations.
Papers
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Patent
Insulated-gate transistor having narrow-bandgap-source
Makoto Yoshimi,Satoshi Inaba,Atsushi Murakoshi,Mamoru Terauchi,Naoyuki Shigyo,Yoshiaki Matsushita,Masami Aoki,Takeshi Hamamoto,Yutaka Ishibashi,Tohru Ozaki,Hitomi Kawaguchiya,Kazuya Matsuzawa,Osamu Arisumi,Akira Nishiyama +13 more
TL;DR: In this article, the leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET.
Journal ArticleDOI
10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
Takayuki Ito,Toshihiko Iinuma,Atsushi Murakoshi,Haruko Akutsu,Kyoichi Suguro,Tsunetoshi Arikado,Katsuya Okumura,Masaki Yoshioka,Tatsushi Owada,Yasuhiro Imaoka,Hiromi Murayama,Tatsuhumi Kusuda +11 more
TL;DR: Flash-lamp annealing (FLA) as mentioned in this paper is a new method of activating implanted impurities, which is able to reduce the time of the heating cycle to within the millisecond range.
Journal ArticleDOI
High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide
Satoshi Inaba,K. Okano,S. Matsuda,M. Fujiwara,Akira Hokazono,K. Adachi,Kazuya Ohuchi,H. Suto,H. Fukui,T. Shimizu,S. Mori,H. Oguma,Atsushi Murakoshi,Takaharu Itani,Toshihiko Iinuma,T. Kudo,Hideki Shibata,S. Taniguchi,T. Matsushita,Shunko Magoshi,Y. Watanabe,Mariko Takayanagi,Atsushi Azuma,H. Oyamatsu,K. Suguro,Yasuhiro Katsumata,Yoshiaki Toyoshima,Hidemi Ishiuchi +27 more
TL;DR: The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated in this article to study the feasibility of higher performance operation.
Patent
Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
TL;DR: In this paper, an electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the substrate through the electricallyconductive mask, thereby forming ion implanted layers.
Patent
Solid-state imaging device and method for manufacturing same
TL;DR: In this article, a solid-state imaging device includes a multilayer wiring layer, a semiconductor substrate, an impurity diffusion region of a second conductivity type, an anti-reflection film, a color filter, and a metallic layer.