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Yasuhiro Katsumata
Researcher at Toshiba
Publications - 72
Citations - 1491
Yasuhiro Katsumata is an academic researcher from Toshiba. The author has contributed to research in topics: Gate oxide & MOSFET. The author has an hindex of 20, co-authored 72 publications receiving 1473 citations.
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Journal ArticleDOI
Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI
Toyota Morimoto,Tatsuya Ohguro,S. Momose,Toshihiko Iinuma,Iwao Kunishima,K. Suguro,I. Katakabe,Hiroomi Nakajima,Masakatsu Tsuchiaki,Mizuki Ono,Yasuhiro Katsumata,Hiroshi Iwai +11 more
TL;DR: In this article, a nickel-monosilicide (NiSi) technology suitable for a deep sub-micron CMOS process has been developed, and it has been confirmed that a nickel film sputtered onto n/sup ± and p/sup +/- single-silicon and polysilicon substrates is uniformly converted into NiSi, without agglomeration, by lowtemperature (400-600/spl deg/C) rapid thermal annealing.
Journal ArticleDOI
Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide
Hisayo Momose,S. Nakamura,Tatsuya Ohguro,Takashi Yoshitomi,Eiji Morifuji,Toyota Morimoto,Yasuhiro Katsumata,Hiroshi Iwai +7 more
TL;DR: In this paper, the uniformity, reliability, and dopant penetration of 1.5-nm direct-tunneling gate oxide MOSFETs were investigated for the first time.
Proceedings ArticleDOI
Future perspective and scaling down roadmap for RF CMOS
Eiji Morifuji,Hisayo Momose,Tatsuya Ohguro,Takashi Yoshitomi,H. Kimijima,Fumiyoshi Matsuoka,M. Kinugawa,Yasuhiro Katsumata,Hiroshi Iwai +8 more
TL;DR: It has been found that gate width and finger length are key parameters, especially in sub-100 nm gate length generations, in future scaling-down for RF CMOS technology.
Proceedings ArticleDOI
High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs
Hisayo Momose,Eiji Morifuji,Takashi Yoshitomi,I. Saito,Toyota Morimoto,Yasuhiro Katsumata,Hiroshi Iwai +6 more
TL;DR: In this article, the high-frequency AC characteristics of 1.5 nm direct-tuning gate oxide MOSFET's were shown for the first time, and very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m due to the high transconductance.
Proceedings ArticleDOI
A NiSi salicide technology for advanced logic devices
Toyota Morimoto,Hisayo Momose,Toshihiko Iinuma,Iwao Kunishima,K. Suguro,H. Okana,I. Katakabe,Hiroomi Nakajima,Masakatsu Tsuchiaki,Mizuki Ono,Yasuhiro Katsumata,Hiroshi Iwai +11 more
TL;DR: In this article, a nickel-silicide (NiSi) technology for deep submicron devices has been developed, and it was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicides (Ni Si) stably at low temperature (600 degrees C) over a short period without any agglomeration.