K. Suguro

TL;DR: In this article, a nickel-monosilicide (NiSi) technology suitable for a deep sub-micron CMOS process has been developed, and it has been confirmed that a nickel film sputtered onto n/sup ± and p/sup +/- single-silicon and polysilicon substrates is uniformly converted into NiSi, without agglomeration, by lowtemperature (400-600/spl deg/C) rapid thermal annealing.

TL;DR: In this article, a CMOS FinFET fabricated on bulk Si substrate is discussed from the viewpoint of device size scalability and short channel effect control, and a trimming technique by special oxidation was applied to reduce fin width down to sub-10 nm regime.

TL;DR: In this article, a DS-Schottky S/D CMOS-FinFET with dopant-segregated Schottky source/drain was demonstrated.

TL;DR: In this article, a nickel-silicide (NiSi) technology for deep submicron devices has been developed, and it was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicides (Ni Si) stably at low temperature (600 degrees C) over a short period without any agglomeration.

TL;DR: In this paper, the work function deviation (crystal orientation deviation) was found to cause the threshold voltage deviation (/spl Delta/V/sub th/) in the damascene metal gate transistors.